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首页> 外文期刊>Advanced Functional Materials >Semiconducting to Metallic Electronic Landscapes in Defects-Controlled 2D π-d Conjugated Coordination Polymer Thin Films
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Semiconducting to Metallic Electronic Landscapes in Defects-Controlled 2D π-d Conjugated Coordination Polymer Thin Films

机译：缺陷控制的2Dπ-D共轭配位聚合物薄膜的半导体对金属电子景观

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摘要

Two-dimensional coordination polymers (2DCPs) have been predicted to exhibit exotic properties such as superconductivity, topological insulating behavior, catalytic activity, and superior ion transport for energy applications; experimentally, these materials have fallen short of their expectation due to the lack of synthesis protocols that yield continuous, large crystallite domains, and highly ordered thin films with controllable physical and chemical properties. Herein, the fabrication of large-area, highly ordered 2DCP thin films with large crystallite domains using chemical vapor deposition (CVD) approaches is described. It is demonstrated that defects and the packing motifs of 2DCP thin films may be controlled by adjusting the vapor-vapor and vapor-solid interactions of the metal and organic linker precursors during the CVD fabrication process. Such control allows for the fabrication of defects-controlled 2DCP thin films that show either semiconducting or metallic behavior. The findings provide the first demonstration of tuning the electrical properties of sub 100 nm-thick continuous 2DCP thin films by controlling their electronic landscape through defect engineering. As such, it is determined that large-area, highly ordered 2DCP thin films may undergo a semiconducting to metallic transition that is correlated to changes in morphology, crystalline domain sizes, crystallite orientation, defect interactions, and electronic structure.
机译：预测二维配位聚合物（2DCPS）表现出具有异种性质，例如超导性，拓扑绝缘行为，催化活性和高能量应用的优质离子转运;实验，这些材料由于缺乏合成方案而产生连续，大晶区域和具有可控物理和化学性质的高度有序的薄膜，因此这些材料缺乏预期。这里，描述了使用使用化学气相沉积（CVD）方法的大型晶体结构域的大面积，高度有序的2DCP薄膜的制造。结果证明，可以通过在CVD制造过程中调节金属和有机连接剂前体的蒸汽和蒸汽固体相互来控制2DCP薄膜的缺陷和包装基序。这种控制允许制造缺陷控制的2DCP薄膜，其显示半导体或金属行为。该发现提供了通过缺陷工程控制其电子景观来调整Sub 100 Nm厚的连续2DCP薄膜的电特性的第一次演示。因此，确定大面积，高度有序的2DCP薄膜可以经历半导体，以与形态，结晶域尺寸，晶体型取向，缺陷相互作用和电子结构的变化相关的金属转变。

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