Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric

Xue Fei; He Xin; Liu Wenhao; Periyanagounder Dharmaraj; Zhang Chenhui; Chen Mingguang; Lin Chun-Ho; Luo Linqu; Yengel Emre; Tung Vincent; Anthopoulos Thomas D.; Li Lain-Jong; He Jr-Hau; Zhang Xixiang

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Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric

机译：光电铁电畴壁存储由单van der waals铁电

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Due to the potential applications in optoelectronic memories, optical control of ferroelectric domain walls has emerged as an intriguing and important topic in modern solid-state physics. However, its device implementation in a single ferroelectric, such as conventional BaTiO(3)or PZT ceramics, still presents huge challenges in terms of the poor material conductivity and the energy mismatch between incident photons and ferroelectric switching. Here, using the generation of photocurrent in conductive alpha-In2Se3(a van der Waals ferroelectric) with a two-terminal planar architecture, the first demonstration of optical-engineered ferroelectric domain wall in a non-volatile manner for optoelectronic memory application is reported. The alpha-In(2)Se(3)device exhibits a large optical-writing and electrical-erasing (on/off) ratio of 10(4), as well as multilevel current switching upon optical excitation. The narrow direct bandgap of the multilayer alpha-In(2)Se(3)ferroelectric endows the device with broadband optical-writing wavelengths greater than 900 nm. In addition, photonic synapses with approximate linear weight updates for neuromorphic computing are also achieved in the ferroelectric devices. This work represents a breakthrough toward technological applications of ferroelectric nanodomain engineering by light.

机译：由于光电存储器中的潜在应用，铁电畴壁的光学控制已成为现代固态物理学中的有趣和重要课题。然而，其在单个铁电中的装置实现，例如传统的BATIO（3）或PZT陶瓷，仍然呈巨大挑战，在差的材料电导率和入射光子和铁电切换之间的能量不匹配方面仍然存在巨大的挑战。这里，使用具有双端平面架构的导电α-In2Se3（VAN DAR WALS铁电）中的光电流产生，报道了以非易失性方式用于光电存储器应用的光学工程铁电畴壁的第一演示。 α-In（2）SE（3）装置具有> 10（4）的大型光学写入和电气擦除（ON / OFF）比，以及在光学激发时的多级电流切换。多层α-in（2）SE（3）铁电的窄直接带隙赋予设备具有大于900nm的宽带光学写入波长。另外，在铁电器件中也实现了具有近似线性重量更新的光子突触。在铁电器件中也实现了具有近似的神经形态计算。这项工作代表了光线铁电纳米域工程技术应用的突破。

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来源
《Advanced Functional Materials》 |2020年第52期|2004206.1-2004206.9|共9页
作者
Xue Fei; He Xin; Liu Wenhao; Periyanagounder Dharmaraj; Zhang Chenhui; Chen Mingguang; Lin Chun-Ho; Luo Linqu; Yengel Emre; Tung Vincent; Anthopoulos Thomas D.; Li Lain-Jong; He Jr-Hau; Zhang Xixiang;
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King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Comp Elect & Math Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Comp Elect & Math Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;

King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia|Univ New South Wales Dept Mat Sci & Engn Kensington NSW 2052 Australia;

King Abdullah Univ Sci & Technol Comp Elect & Math Sci & Engn Div Thuwal 239556900 Saudi Arabia|City Univ Hong Kong Dept Mat Sci & Engn Kowloon Hong Kong Peoples R China;

King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;

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正文语种 eng
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domain walls; optoelectronic memories; photonic synapses; van der Waal ferroelectrics;

机译：领域墙;光电存储器;光子突触;范德沃尔铁电;

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1. Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions [J] . Advanced Materials . 2020,第14期

机译：范德华斯铁电异质结中非易失性存储器和可编程整流器的栅极耦合使能迟滞
2. Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory [J] . Houfang Liu, Tianqi Lu, Yuxing Li, Advanced Science . 2020,第19期

机译：灵活的准van der Wa族铁电铪基氧化物，用于集成高性能非易失性记忆
3. Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer [J] . Shili Yan, Hai Huang, Zhijian Xie, ACS applied materials & interfaces . 2019,第45期

机译：可靠的非易失性记忆黑色磷铁电场效应晶体管与van der waals缓冲区
4. Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection [C] . Ning Yang, Hung-Yu Chen, Jiangbin Wu, International Electron Devices Meeting . 2020

机译：Van der Waals异质结的铁电隧道结记忆的多尺度模拟：实验和性能投影比较
5. Scanning Probe Microscopy and Electrical Transport Studies of Ferroelectric Thin Films and 2D van der Waals Materials [D] . Xiao, Zhiyong. 2017

机译：铁电薄膜和二维范德华材料的扫描探针显微镜和电传输研究
6. Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory [O] . Houfang Liu, Tianqi Lu, Yuxing Li, 2020

机译：灵活的准van der Wa族铁电铪基氧化物用于集成高性能非易失性记忆
7. Van der Waals engineering of ferroelectric heterostructures for long-retention memory [O] . Xiaowei Wang, Chao Zhu, Ya Deng, 2021

机译：van der WALS工程铁电异质结构，用于长留存记忆

Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric

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