0D/2D Heterostructures Vertical Single Electron Transistor

Mouafo Louis Donald Notemgnou; Godel Florian; Simon Laurent; Dappe Yannick J.; Baaziz Walid; Noumbe Ulrich Nguetchuissi; Lorchat Etienne; Martin Marie-Blandine; Berciaud Stephane; Doudin Bernard; Ersen Ovidiu; Dlubak Bruno; Seneor Pierre; Dayen Jean-Francois

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0D/2D Heterostructures Vertical Single Electron Transistor

机译：0D / 2D异质结构垂直单电子晶体管

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Mixed-dimensional heterostructures formed by the stacking of 2D materials with nanostructures of distinct dimensionality constitute a new class of nanomaterials that offers multifunctionality that goes beyond those of single dimensional systems. An unexplored architecture of single electron transistor (SET) is developed that employs heterostructures made of nanoclusters (0D) grown on a 2D molybdenum disulfide (MoS2) channel. Combining the large Coulomb energy of the nanoclusters with the electronic capabilities of the 2D layer, the concept of 0D-2D vertical SET is unveiled. The MoS2 underneath serves both as a charge tunable channel interconnecting the electrode, and as bottom electrode for each v-SET cell. In addition, its atomic thickness makes it thinner than the Debye screening length, providing electric field transparency functionality that allows for an efficient electric back gate control of the nanoclusters charge state. The Coulomb diamond pattern characteristics of SET are reported, with specific doping dependent nonlinear features arising from the 0D/2D geometry that are elucidated by theoretical modeling. These results hold promise for multifunctional single electron device taking advantage of the versatility of the 2D materials library, with as example envisioned spintronics applications while coupling quantum dots to magnetic 2D material, or to ferroelectric layers for neuromorphic devices.

机译：通过具有不同维度的纳米结构的2D材料堆叠形成的混合尺寸异质结构构成了一种新的纳米材料，其提供超出单维系统的多功能性。开发了一种未探测的单电子晶体管（设定）的结构，其采用由在2D钼二硫化物（MOS2）通道上生长的纳米团簇（0d）制成的异质结构。将纳米能器的大库仑能量与2D层的电子能力相结合，揭开了0D-2D垂直组的概念。下面的MOS2用作互连电极的电荷可调沟道，以及每个V集电池的底部电极。另外，其原子厚度使其比去脱模筛分长度薄，提供电场透明度功能，其允许纳米能器的有效电气后栅极控制。报告了集合的库仑金刚石图案特性，具有由理论建模阐明的0d / 2d几何形状产生的特定掺杂依赖性非线性特征。这些结果保持了利用2D材料库的多功能性的多功能单电子器件的承诺，用作示例设想的闪光灯，同时将量子点耦合到磁性2D材料，或用于神经形态器件的铁电层。

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来源
《Advanced Functional Materials》 |2021年第9期|2008255.1-2008255.9|共9页
作者
Mouafo Louis Donald Notemgnou; Godel Florian; Simon Laurent; Dappe Yannick J.; Baaziz Walid; Noumbe Ulrich Nguetchuissi; Lorchat Etienne; Martin Marie-Blandine; Berciaud Stephane; Doudin Bernard; Ersen Ovidiu; Dlubak Bruno; Seneor Pierre; Dayen Jean-Francois;
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Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess F-67034 Strasbourg France;

Univ Paris Saclay Unite Mixte Phys CNRS Thales F-91767 Palaiseau France;

Univ Haute Alsace Inst Sci Mat Mulhouse CNRS UMR 7361 F-68093 Mulhouse France;

Univ Paris Saclay CEA Saclay Gif Sur Yvette CNRS SPEC CEA F-91191 Paris France;

Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess F-67034 Strasbourg France;

Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess F-67034 Strasbourg France;

Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess F-67034 Strasbourg France;

Univ Paris Saclay Unite Mixte Phys CNRS Thales F-91767 Palaiseau France;

Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess F-67034 Strasbourg France|Inst Univ France 1 Rue Descartes F-75231 Paris 05 France;

Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess F-67034 Strasbourg France;

Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess F-67034 Strasbourg France;

Univ Paris Saclay Unite Mixte Phys CNRS Thales F-91767 Palaiseau France;

Univ Paris Saclay Unite Mixte Phys CNRS Thales F-91767 Palaiseau France;

Univ Strasbourg Inst Phys & Chim Mat Strasbourg IPCMS CNRS UMR 7504 23 Rue Loess F-67034 Strasbourg France|Inst Univ France 1 Rue Descartes F-75231 Paris 05 France;

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正文语种 eng
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2D; heterostructures; multifunctional materials; nanoelectronics; nanoparticles; single electron transistors; transition metal dichalcogenides;

机译：2D;异质结构;多功能材料;纳米电子;纳米颗粒;单电子晶体管;过渡金属二甲硅藻;

0D/2D Heterostructures Vertical Single Electron Transistor

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