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首页> 外文期刊>Advanced Functional Materials >Van der Waals Nanowires with Continuously Variable Interlayer Twist and Twist Homojunctions
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Van der Waals Nanowires with Continuously Variable Interlayer Twist and Twist Homojunctions

机译：Van der Waals纳米线，具有连续可变的层间扭曲和扭曲同性全面

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摘要

Moire patterns at van der Waals interfaces between twisted 2D crystals give rise to distinct optoelectronic excitations, as well as, narrowly dispersive bands responsible for correlated electron phenomena. Contrasting with the conventional, mechanically stacked planar twist moires, recent work shows twisted van der Waals interfaces spontaneously formed in nanowires of layered crystals, where Eshelby twist due to axial screw dislocations stabilizes a chiral structure with small interlayer rotation. Here, the realization of tunable twist in germanium(II) sulfide (GeS) van der Waals nanowires is reported. Tapered nanowires host continuously variable interlayer twist. Homojunctions between dislocated (chiral) and defect-free (achiral) segments are obtained by triggering the emission of axial dislocations during growth. Measurements across such junctions, implemented here using local absorption and luminescence spectroscopy, provide a convenient tool for detecting twist effects. The results identify a versatile system for 3D twistronics, probing moire physics, and for realizing moire architectures without equivalent in planar systems.
机译：扭曲的2D晶体之间的Van der Wa种界面的Moire图案引起不同的光电激励，以及负责相关电子现象的狭窄分散带。与常规机械堆叠平面扭转莫里的对比，最近的工作显示了在层状晶体的纳米线中自发地形成的扭曲范德瓦尔斯界面，其中由于轴向螺杆脱位引起的eShelby扭曲稳定了具有小层间旋转的手性结构。这里，报道了锗（II）硫化锗（GES）范德瓦尔纳米线的可调谐捻度。锥形纳米线宿主连续可变的层间捻度。通过在生长期间触发轴向脱位的发射来获得脱位（手性）和无缺陷（非缺陷）段之间的同性记。在这里使用局部吸收和发光光谱在此实现的这种连接点的测量提供了一种用于检测扭曲效果的方便工具。结果识别用于3D扭曲，探测莫尔物理学的多功能系统，以及在平面系统中实现莫尔架构而实现莫尔架构。

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