Dynamic Oscillation via Negative Differential Resistance in Type Ⅲ Junction Organic/Two-Dimensional and Oxide/ Two-Dimensional Transition Metal Dichalcogenide Diodes

Choi Wonjun; Hong Sungjae; Jeong Yeonsu; Cho Yongjae; Shin Hyung Gon; Park Ji Hoon; Yi Yeonjin; Im Seongil

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Dynamic Oscillation via Negative Differential Resistance in Type Ⅲ Junction Organic/Two-Dimensional and Oxide/ Two-Dimensional Transition Metal Dichalcogenide Diodes

机译：Ⅲ型结有机/二维氧化物/二维过渡金属二甲胺化二极管负差分电阻的动态振荡

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Among many of 2D semiconductor-based devices, type III PN junction diodes are given special attentions due to their unique function, negative differential resistance (NDR). However, it has been found uneasy to achieve well-matched type III PN junctions from 2D-2D van der Waals heterojunctions. Here, the authors present other alternatives of type III heterojunctions, using 2D p-MoTe2/organic n-type dipyrazino[2,3-f:2 ',3 '-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) and 2D p-WSe2/n-MoOx systems. Those junction diodes appear to well-demonstrate static and dynamic NDR behavior via resonant tunneling and electron-hole recombination. Extended to an inverter circuit, p-MoTe2/n-HAT-CN diode enables multilevel inverter characteristics as monolithically integrated with p-MoTe2 channel field effect transistor. The same NDR diode shows dynamic LC oscillation behavior under a constant DC voltage, connected to an external inductor. From p-WSe2/n-MoOx oxide diode, similar NDR behavior to those of p-MoTe2/n-HAT-CN is again observed along with LC oscillations. The authors attribute these visible oscillation results to high peak-to-valley current ratios of their organic or oxide/2D heterojunction diodes.

机译：在基于2D的许多基于半导体的装置中，III型PN结二极管由于其独特的功能，负差分电阻（NDR）而被赋予特殊关节。然而，已经发现，从2D-2D范德华杂志实现良好匹配的III型PN连接点，发现了不安。在这里，作者呈现III型异质结的其他替代品，使用2D p-Mote2 /有机N型DiPyrazino [2,3-F：2'，3'-H]喹喔啉-2,3,6,7,10， 11-六丙基腈（帽CN）和2D P-WSE2 / N-MOOX系统。这些结二极管似乎通过谐振隧道和电子空穴重组展示了静态和动态NDR行为。扩展到逆变器电路，P-Mote2 / N-Hat-CN二极管使多级逆变器特性能够与P-Mote2信道场效应晶体管单模集成。相同的NDR二极管显示在连接到外部电感器的恒定直流电压下的动态LC振荡行为。从P-WSE2 / N-MOOX氧化物二极管，与LC振荡再次观察到与P-MOTE2 / N-HAT-CN的类似NDR行为。作者将这些可见振荡的结果归因于有机或氧化物/ 2D异质结二极管的高峰谷电流比率。

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来源
《Advanced Functional Materials》 |2021年第9期|2009436.1-2009436.7|共7页
作者
Choi Wonjun; Hong Sungjae; Jeong Yeonsu; Cho Yongjae; Shin Hyung Gon; Park Ji Hoon; Yi Yeonjin; Im Seongil;
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Yonsei Univ Dept Phys Van der Waals Mat Res Ctr 50 Yonsei Ro Seoul 03722 South Korea;

Yonsei Univ Dept Phys Van der Waals Mat Res Ctr 50 Yonsei Ro Seoul 03722 South Korea;

Yonsei Univ Dept Phys Van der Waals Mat Res Ctr 50 Yonsei Ro Seoul 03722 South Korea;

Yonsei Univ Dept Phys Van der Waals Mat Res Ctr 50 Yonsei Ro Seoul 03722 South Korea;

Yonsei Univ Dept Phys Van der Waals Mat Res Ctr 50 Yonsei Ro Seoul 03722 South Korea;

Yonsei Univ Dept Phys Van der Waals Mat Res Ctr 50 Yonsei Ro Seoul 03722 South Korea;

Yonsei Univ Dept Phys Van der Waals Mat Res Ctr 50 Yonsei Ro Seoul 03722 South Korea;

Yonsei Univ Dept Phys Van der Waals Mat Res Ctr 50 Yonsei Ro Seoul 03722 South Korea;

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正文语种 eng
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negative differential resistances; oscillations; p-MoTe2/n-HAT-CN; p-WSe2/n-MoOx; two-dimensional transition metal dichalcogenides; type III heterojunctions;

机译：负差分电阻;振荡;p-mote2 / n-hat-cn;p-wse2 / n-moox;二维过渡金属二甲硅藻;III型异质结;

Dynamic Oscillation via Negative Differential Resistance in Type Ⅲ Junction Organic/Two-Dimensional and Oxide/ Two-Dimensional Transition Metal Dichalcogenide Diodes

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