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Structure-Induced Stability in Sinuous Black Silicon for Enhanced Hydrogen Evolution Reaction Performance

机译：振动黑色硅中结构诱导的稳定性，提高氢气进化反应性能

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摘要

Clean energy infrastructures of the future depend on efficient, low-cost, long-lasting systems for the conversion and storage of solar energy. This is currently limited by the durability and economic viability of today's solar energy systems. These limitations arise from a variety of technical challenges; primarily, a need remains for the development of stable solar absorber-catalyst interfaces and improved understanding of their mechanisms. Although thin film oxides formed via atomic layer deposition have been widely employed between the solar absorber-catalyst interfaces to improve the stability of photoelectrochemical devices, few stabilization strategies have focused on improving the intrinsic durability of the semiconductor. Here, a sinuous black silicon photocathode (s-bSi) with intrinsically improved stability owing to the twisted nanostructure is demonstrated. Unlike columnar black silicon with rapidly decaying photocurrent density, s-bSi shows profound stability in strong acid, neutral, and harsh alkaline conditions during a 24-h electrolysis. Furthermore, scanning transmission electron microscopy studies prior to and post electrolysis demonstrate limited silicon oxide growth inside the walls of s-bSi. To the authors' knowledge, this is the first time structure-induced stability has been reported for enhancing the stability of a photoelectrode/catalyst interface for solar energy conversion.
机译：清洁能源基础设施未来取决于高效，低成本，持久的系统，用于转换和储存太阳能。这目前受到当今太阳能系统的耐用性和经济可行性的限制。这些限制来自各种技术挑战;主要是，需要仍然用于开发稳定的太阳能吸收催化剂界面和改善对其机制的理解。尽管通过原子层沉积形成的薄膜氧化物已广泛采用太阳能吸收剂 - 催化剂界面以改善光电化学器件的稳定性，但很少有稳定策略专注于提高半导体的内在耐久性。这里，证明了由于扭曲纳米结构而具有本质上提高稳定性的蜿蜒的黑色光电阴极（S-BSI）。与柱状黑色硅不同，具有快速衰减的光电流密度，S-BSI在24小时电解期间显示出强酸，中性和苛刻碱性条件的深刻稳定性。此外，在S-BSI壁内扫描透射电子显微镜研究和后电解后展示了有限的氧化硅生长。为了提高作者的知识，这是第一次鉴定结构诱导的稳定性，以提高光电极/催化剂界面的稳定性，用于太阳能转换。

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