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Statistical Piezotronic Effect in Nanocrystal Bulk by Anisotropic Geometry Control

机译：各向异性几何控制纳米晶体体统计压电效应

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摘要

Utilizing inner-crystal piezoelectric polarization charges to control carrier transport across a metal-semiconductor or semiconductor-semiconductor interface, piezotronic effect has great potential applications in smart micro/nano-electromechanical system (MEMS/NEMS), human-machine interfacing, and nanorobotics. However, current research on piezotronics has mainly focused on systems with only one or rather limited interfaces. Here, the statistical piezotronic effect is reported in ZnO bulk composited of nanoplatelets, of which the strain/stress-induced piezo-potential at the crystals' interfaces can effectively gate the electrical transport of ZnO bulk. It is a statistical phenomenon of piezotronic modification of large numbers of interfaces, and the crystal orientation of inner ZnO nanoplatelets strongly influence the transport property of ZnO bulk. With optimum preferred orientation of ZnO nanoplatelets, the bulk exhibits an increased conductivity with decreasing stress at a high pressure range of 200-400 MPa, which has not been observed previously in bulk. A maximum sensitivity of 1.149 mu S m(-1) MPa-1 and a corresponding gauge factor of 467-589 have been achieved. As a statistical phenomenon of many piezotronic interfaces modulation, the proposed statistical piezotronic effect extends the connotation of piezotronics and promotes its practical applications in intelligent sensing.
机译：利用内晶压电偏振电荷以控制载波运输在金属半导体或半导体半导体界面上，压电效应在智能微/纳米机电系统（MEMS / NEM），人机接口和纳米藻体中具有很大的潜在应用。然而，目前对压电偶氮学的研究主要集中在仅具有一个或相当有限的接口的系统上。这里，统计压电效应在纳米块组成的ZnO块状物中报道，其中晶体界面的应变/应力诱导的压电电位可以有效地栅极栅极膨胀ZnO散装。它是大量界面的压电调节的统计现象，内ZnO纳米型纳米型晶体的晶体取向强烈影响ZnO散装的运输特性。具有ZnO纳米纳米孔的最佳优选取向，散装具有增加的导电性，其在200-400MPa的高压范围内的应力降低，这尚未在体积中观察到。已经实现了最大灵敏度为1.149 mu S m（-1）MPa-1和467-589的相应规格因子。作为许多压电界面调制的统计现象，所提出的统计压电效应延伸了压电偶氮公司的内涵，并促进其在智能感测中的实际应用。

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  • 来源
    《Advanced Functional Materials》 |2021年第17期|2010339.1-2010339.9|共9页
  • 作者

    Liu Shuhai; Han Ming; Feng Xiaolong; Yu Qiuhong; Gu Long; Wang Longfei; Qin Yong; Wang Zhong Lin;

  • 作者单位

    Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Shaanxi Peoples R China|Lanzhou Univ Sch Phys Sci & Technol Inst Nanosci & Nanotechnol Lanzhou 730000 Gansu Peoples R China;

    Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Shaanxi Peoples R China;

    Singapore Univ Technol & Design Res Lab Quantum Mat Singapore 487372 Singapore;

    Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Shaanxi Peoples R China;

    Chinese Acad Sci Beijing Inst Nanoenergy & Nanosyst Beijing 100083 Peoples R China|Univ Chinese Acad Sci Coll Nanosci & Technol Beijing 100049 Peoples R China|Georgia Inst Technol Sch Mat Sci & Engn Atlanta GA 30332 USA;

    Lanzhou Univ Sch Phys Sci & Technol Inst Nanosci & Nanotechnol Lanzhou 730000 Gansu Peoples R China;

    Chinese Acad Sci Beijing Inst Nanoenergy & Nanosyst Beijing 100083 Peoples R China|Univ Chinese Acad Sci Coll Nanosci & Technol Beijing 100049 Peoples R China|Georgia Inst Technol Sch Mat Sci & Engn Atlanta GA 30332 USA;

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  • 正文语种 eng
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  • 关键词

    mechanical gating; piezoelectric effect; piezotronic effect; statistical distribution; ZnO nanoplatelets;

    机译：机械门控;压电效应;压电效果;统计分布;ZnO纳米键;

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