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首页> 外文期刊>Advanced Functional Materials >Electric Field Gradient-Controlled Domain Switching for Size Effect-Resistant Multilevel Operations in HfO_2-Based Ferroelectric Field-Effect Transistor
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Electric Field Gradient-Controlled Domain Switching for Size Effect-Resistant Multilevel Operations in HfO_2-Based Ferroelectric Field-Effect Transistor

机译：电场梯度控制域切换，用于基于HFO_2的铁电场效应晶体管的尺寸抗效效应多级操作

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摘要

The ferroelectric field-effect transistor (FeFET) is a promising memory technology due to its high switching speed, low power consumption, and high capacity. Since the recent discovery of ferroelectricity in Si-doped HfO2 thin films, HfO2-based materials have received considerable interest for the development of FeFET, particularly considering their excellent complementary metal-oxide-semiconductor (CMOS) compatibility, relatively low permittivity, and high coercive field. However, the multilevel capability is limited by the device size, and multidomain switching tends to vanish when the channel length of the HfO2-based FeFET approaches 30 nm. Here, multiple nonvolatile memory states are realized by tuning the electric field gradient across the Hf0.5Zr0.5O2 (HZO) ferroelectric thin film along the channel direction of FeFET. The multi-step domain switching can be readily and directionally controlled in the HZO-FeFETs, with a very low variation. Moreover, multiple nonvolatile memory states or multi-step domain switching can be effectively controlled in the FeFETs with a channel length less than 20 nm. This study suggests the possibility to implement multilevel memory operations and mimic biological synapse functions in highly scaled HfO2-based FeFETs.
机译：由于其高开关速度，低功耗和高容量，铁电场效应晶体管（FEFET）是一个有前途的内存技术。由于最近在Si-掺杂的HFO2薄膜中发现铁电性，基于HFO2的材料对FFET的开发有相当令人兴趣，特别是考虑其优异的互补金属氧化物半导体（CMOS）相容性，相对低的介电常数和高矫顽力场地。然而，当基于HFO2的FFFET的沟道长度接近30nm时，多级能力受到器件尺寸的限制，并且多麦田切换趋于消失。这里，通过沿着FFET的沟道方向在HF0.5ZR0.5O2（HZO）铁电薄膜上调谐电场梯度来实现多个非易失性存储器状态。可以在HZO-FEFET中易于和方向地控制多步域切换，具有非常低的变化。此外，可以在具有小于20nm的沟道长度的FEFET中有效地控制多个非易失性存储器状态或多步骤域切换。本研究表明，在高度缩放的基于HFO2的FFFET中实现了实现多级存储器操作和模拟生物突触功能的可能性。

著录项

  • 来源
    《Advanced Functional Materials》 |2021年第17期|2011077.1-2011077.9|共9页
  • 作者

    Zeng Binjian; Liu Chen; Dai Siwei; Zhou Pingan; Bao Keyu; Zheng Shuaizhi; Peng Qiangxiang; Xiang Jinjuan; Gao Jianfeng; Zhao Jie; Liao Min; Zhou Yichun;

  • 作者单位

    Xiangtan Univ Sch Mat Sci & Engn Minist Educ Key Lab Low Dimens Mat & Applicat Technol Xiangtan 411105 Peoples R China;

    Xiangtan Univ Sch Mat Sci & Engn Minist Educ Key Lab Low Dimens Mat & Applicat Technol Xiangtan 411105 Peoples R China;

    Xiangtan Univ Sch Mat Sci & Engn Minist Educ Key Lab Low Dimens Mat & Applicat Technol Xiangtan 411105 Peoples R China;

    Xiangtan Univ Sch Mat Sci & Engn Minist Educ Key Lab Low Dimens Mat & Applicat Technol Xiangtan 411105 Peoples R China;

    Xiangtan Univ Sch Mat Sci & Engn Minist Educ Key Lab Low Dimens Mat & Applicat Technol Xiangtan 411105 Peoples R China;

    Xiangtan Univ Sch Mat Sci & Engn Minist Educ Key Lab Low Dimens Mat & Applicat Technol Xiangtan 411105 Peoples R China;

    Xiangtan Univ Sch Mat Sci & Engn Minist Educ Key Lab Low Dimens Mat & Applicat Technol Xiangtan 411105 Peoples R China;

    Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc R&D Ctr Beijing 100029 Peoples R China;

    Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc R&D Ctr Beijing 100029 Peoples R China;

    Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc R&D Ctr Beijing 100029 Peoples R China;

    Xiangtan Univ Sch Mat Sci & Engn Minist Educ Key Lab Low Dimens Mat & Applicat Technol Xiangtan 411105 Peoples R China;

    Xiangtan Univ Sch Mat Sci & Engn Minist Educ Key Lab Low Dimens Mat & Applicat Technol Xiangtan 411105 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    analog synapses; ferroelectric field#8208; effect transistors; HfO; (2) ferroelectric thin films; multilevel memories; multi#8208; step domain switching;

    机译：模拟突触;铁电场＆＃8208;效果晶体管;HFO;（2）铁电薄膜;多级存储器;多＆＃8208;步骤域切换;

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