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首页> 外文期刊>Advanced Functional Materials >High Mobility 3D Dirac Semimetal (Cd_3As_2) for Ultrafast Photoactive Terahertz Photonics
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High Mobility 3D Dirac Semimetal (Cd_3As_2) for Ultrafast Photoactive Terahertz Photonics

机译：超超速光源太赫兹光子学的高移动性3D Dirac半岩（CD_3AS_2）

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摘要

The Dirac semimetal cadmium arsenide (Cd3As2), a 3D electronic analog of graphene, has sparked renewed research interests for its novel topological phases and excellent optoelectronic properties. The gapless nature of its 3D electronic band facilitates strong optical nonlinearity and supports Dirac plasmons that are of particular interest to realize high-performance electronic and photonic devices at terahertz (1 THz = 4.1 meV) frequencies, where the performance of most dynamic materials are limited by the tradeoff between power-efficiency and switching speed. Here, all-optical, low-power, ultrafast broadband modulation of terahertz waves using an ultrathin film (100 nm, lambda/3000) of Cd3As2 are experimentally demonstrated through active tailoring of the photoconductivity. The measurements reveal the photosensitive metallic behavior of Cd3As2 with high terahertz electron mobility of 7200 cm(2) (Vs)(-1). In addition, optical fluence dependent ultrafast charge carrier relaxation (15.5 ps), terahertz mobility, and long momentum scattering time (157 fs) comparable to superconductors that invoke kinetic inductance at terahertz frequencies are demonstrated. These remarkable properties of 3D Dirac topological semimetal envision a new class of power-efficient, high speed, compact, tunable electronic, and photonic devices.
机译：狄拉克半乳镉砷（CD3AS2）是石墨烯的3D电子模拟，引发了其新颖的拓扑阶段和优异的光电性能的重新研究兴趣。其3D电子频带的无间隙性有助于强光非线性，并支持特殊兴趣的DIRAC等离子体，以实现在太赫兹（1 THz = 4.1MeV）频率下的高性能电子和光子器件，其中大多数动态材料的性能受到限制通过功率效率和切换速度之间的权衡。这里，通过活性剪裁光电导率，通过活性剪裁来实验地证明了使用过敏膜（100nm，lambda / 3000）的全光，低功率，超宽度宽带调制CD3AS2的CD3AS2。测量显示CD3As2的光敏金属行为，具有7200cm（2）（Vs）（ - 1）的高太赫兹电子迁移率。另外，光学通量依赖性超快电荷载波弛豫（15.5 PS），太赫兹迁移率和长动量散射时间（157FS）与超导体相当，可对其在太赫兹频率下调用动力学电感的超导体。这些显着的3D Dirac拓扑半决面设想了一类新型的高效，高速，紧凑，可调电子和光子器件。

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  • 来源
    《Advanced Functional Materials》 |2021年第17期|2011011.1-2011011.9|共9页
  • 作者

    Dai Zijie; Manjappa Manukumara; Yang Yunkun; Tan Thomas Cai Wei; Qiang Bo; Han Song; Wong Liang Jie; Xiu Faxian; Liu Weiwei; Singh Ranjan;

  • 作者单位

    Nanyang Technol Univ Div Phys & Appl Phys Sch Phys & Math Sci 21 Nanyang Link Singapore 637371 Singapore|Nanyang Technol Univ Photon Inst Ctr Disrupt Photon Technol Photon 50 Nanyang Ave Singapore 639798 Singapore|Nankai Univ Inst Modern Opt Tianjin Key Lab Microscale Opt Informat Sci & Tec Tianjin 300350 Peoples R China;

    Nanyang Technol Univ Div Phys & Appl Phys Sch Phys & Math Sci 21 Nanyang Link Singapore 637371 Singapore|Nanyang Technol Univ Photon Inst Ctr Disrupt Photon Technol Photon 50 Nanyang Ave Singapore 639798 Singapore;

    Fudan Univ State Key Lab Surface Phys Shanghai 200433 Peoples R China|Fudan Univ Dept Phys Shanghai 200433 Peoples R China|Fudan Univ Inst Nanoelect Devices & Quantum Comp Shanghai 200433 Peoples R China|Shanghai Res Ctr Quantum Sci Shanghai 201315 Peoples R China;

    Nanyang Technol Univ Div Phys & Appl Phys Sch Phys & Math Sci 21 Nanyang Link Singapore 637371 Singapore|Nanyang Technol Univ Photon Inst Ctr Disrupt Photon Technol Photon 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Elect & Elect Engn 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Div Phys & Appl Phys Sch Phys & Math Sci 21 Nanyang Link Singapore 637371 Singapore|Nanyang Technol Univ Photon Inst Ctr Disrupt Photon Technol Photon 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Elect & Elect Engn 50 Nanyang Ave Singapore 639798 Singapore;

    Fudan Univ State Key Lab Surface Phys Shanghai 200433 Peoples R China|Fudan Univ Dept Phys Shanghai 200433 Peoples R China|Fudan Univ Inst Nanoelect Devices & Quantum Comp Shanghai 200433 Peoples R China|Shanghai Res Ctr Quantum Sci Shanghai 201315 Peoples R China;

    Nankai Univ Inst Modern Opt Tianjin Key Lab Microscale Opt Informat Sci & Tec Tianjin 300350 Peoples R China;

    Nanyang Technol Univ Div Phys & Appl Phys Sch Phys & Math Sci 21 Nanyang Link Singapore 637371 Singapore|Nanyang Technol Univ Photon Inst Ctr Disrupt Photon Technol Photon 50 Nanyang Ave Singapore 639798 Singapore;

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  • 正文语种 eng
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  • 关键词

    3D Dirac semimetal; Cd; As-3; (2); high mobility; terahertz photonics; ultrafast tunable conductivity;

    机译：3D Dirac半型;CD;AS-3;（2）;高迁移率;太赫兹光子学;超速可调导电性;

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