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Gate-Controlled Polarity-Reversible Photodiodes with Ambipolar 2D Semiconductors

机译：具有Ambipolar 2D半导体的栅极控制极性可逆光电二极管

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摘要

A photosensor with an amplitude-tunable and polarity-reversible response under gate modulation has potential as a computational photosensor, which can provide more recognition degree of data to enhance signal processing efficiency. Although, the ambipolar 2D semiconductors possess unique gate-tunable properties, the question of how to utilize this property to design polarity-reversible photodiodes for intelligent applications remains unanswered. Here, gate-controllable polarity-reversible photodiodes based on ambipolar 2D semiconductors with an asymmetrically metal-contacted architecture are proposed. By controlling the gate-field, the local carrier type and density profile can be manipulated in the channel due to the partial shielding feature of the asymmetrically metal-contacted architecture, resulting in a polarity-reversible photodiode. The reported WSe2-based photodiode possesses excellent rectifying behavior with a rectification ratio over 10(5), photovoltaic performance with 90% external quantum efficiency, and 2.3% power conversion efficiency under gate regulation. Meanwhile, the device exhibits reversible polarity of photovoltage from a negative to positive state under gate control. By utilizing the reversible photovoltage of the WSe2 photodiode, an optoelectronic switch with a photovoltage polarity signal is demonstrated without a bias voltage. This photovoltage-reversible homodiode paves the way to develop 2D devices with multiple operation modes for potential applications in high-efficiency photovoltaics, intelligent vision sensors, and logic optoelectronics.
机译：在栅极调制下具有幅度可调和极性可逆响应的光电传感器具有计算光电传感器，其可以提供更多的数据识别程度以提高信号处理效率。虽然，Ambipolar 2D半导体具有唯一的栅极可调性，但如何利用此属性来设计智能应用程序的极性可逆光电二极管的问题仍未得到应答。这里，提出了基于具有不对称金属接触架构的基于Ampolar 2D半导体的栅极可控极性可逆光电二极管。通过控制栅极场，由于不对称的金属接触架构的部分屏蔽特征，可以在通道中操纵本地载体类型和密度分布，从而导致极性可逆光电二极管。报道的基于WSE2的光电二极管具有优异的整流行为，整流比率超过10（5），光伏性能，具有90％的外部量子效率，并且在栅极调节下的电力转换效率为2.3％。同时，该器件在栅极控制下具有从负到正状态的光伏电压的可逆极性。通过利用WSE2光电二极管的可逆光电电压，通过偏置电压对具有光伏极性信号的光电开关进行说明。该光伏可逆的同性恋铺设了开发具有多种操作模式的2D器件，可用于高效光伏，智能视觉传感器和逻辑光电子中的潜在应用。

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  • 来源
    《Advanced Functional Materials》 |2021年第8期|2007559.1-2007559.10|共10页
  • 作者

    Du Junli; Liao Qingliang; Liu Baishan; Zhang Xiankun; Yu Huihui; Ou Yang; Xiao Jiankun; Kang Zhuo; Si Haonan; Zhang Zheng; Zhang Yue;

  • 作者单位

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Beijing Key Lab Adv Energy Mat & Technol Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China|Univ Sci & Technol Beijing Sch Mat Sci & Engn State Key Lab Adv Met & Mat Beijing 100083 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    ambipolar 2D semiconductors; doping#8208; free; field effect modulation; homodiodes; partial shield effect; reversible polarity;

    机译：Ambipolar 2D半导体;兴奋剂＆＃8208;自由;场效应调制;偶像;部分屏蔽效果;可逆极性;

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