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Monolayer Hexagonal Boron Nitride: An Efficient Electron Blocking Layer in Organic Photovoltaics

机译:单层六边形氮化物:有机光伏中的有效电子阻挡层

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摘要

In this study, monolayer hexagonal boron nitride (h-BN) grown via chemical vapor deposition (CVD) as an effective electron blocking layer (EBL) for the organic photovoltaics (OPVs) is proposed. Unexpectedly, it is found that h-BN can replace the commonly used hole transport layers (HTLs), i.e., molybdenum trioxide (MoO3) and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) in an inverted device architecture. Here, a wet-transfer technique is employed and a single layer of h-BN on top of the PV2000:PC60BM blend is successfully placed. Analysis of the bandgap diagram shows that the monolayer h-BN makes smaller barrier for holes but significantly larger barrier for electrons. This makes the h-BN effective in blocking electrons while creating a possible path for the holes through tunneling to the electrode, due to the low energy barrier at the PV2000/h-BN interface. Using h-BN as an EBL, efficient inverted OPVs are achieved with an average solar-to-power conversion efficiency of 6.13%, which is comparable with that of reference devices based on MoO3 (7.3%) and PEDOT:PSS (7.6%) as HTLs. Interestingly, the devices with h-BN shows great light-soak stability. The study reveals that the monolayer h-BN grown by CVD could be an effective alternative EBL for the fabrication of efficient, lightweight, and stable OPVs.
机译:在本研究中,提出了通过化学气相沉积(CVD)生长作为有机光伏(OPV)的有效电子阻挡层(EBL)生长的单层六边形氮化硼(H-BN)。出乎意料地,发现H-BN可以在倒装置架构中取代常用的空穴传输层(HTL),即三氧化钼(MOO3)和聚(3,4-亚乙基氧基噻吩)聚苯乙烯磺酸(PEDOT:PSS)。这里,采用湿转移技术,并在PV2000顶部的单层H-BN成功地放置了PC60BM共混物。该带隙图的分析表明,单层H-BN为孔制造较小的屏障,但是电子对电子的屏障显着更大。这使得H-BN在阻挡电子时有效地阻挡电子,同时通过PV2000 / H-BN接口处的低能量屏障产生通过隧穿到电极的可能路径。使用H-BN作为EBL,实现高效的倒置OPV,平均太阳能电力转换效率为6.13%,这与基于Moo3(7.3%)和PEDOT的参考装置(7.6%)相当作为htls。有趣的是,具有H-BN的器件显示出很大的光浸泡稳定性。该研究表明,CVD种植的单层H-BN可以是用于制造有效,轻质和稳定的OPV的有效替代EBL。

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