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首页> 外文期刊>Advanced Functional Materials >Double-Side Crystallization Tuning to Achieve over 1 μm Thick and Well-Aligned Block-Like Narrow-Bandgap Perovskites for High-Efficiency Near-Infrared Photodetectors
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Double-Side Crystallization Tuning to Achieve over 1 μm Thick and Well-Aligned Block-Like Narrow-Bandgap Perovskites for High-Efficiency Near-Infrared Photodetectors

机译：双面结晶调谐，实现超过1μm的厚度和对齐良好的块状窄带胶凝池，用于高效近红外光电探测器

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摘要

Solution-processed narrow-bandgap Sn-Pb perovskites have shown their potential in near-infrared (NIR) photodetection as a promising alternative to traditional silicon and inorganic compounds. To achieve efficient NIR photodetection, high-quality Sn-Pb perovskite thick films with well-packed, smooth, and pinhole/void-free features are highly desirable for boosting the spectral absorption. Understanding the crystallization kinetics and tuning the crystallization are fundamentally important to reach such high-quality thick Sn-Pb perovskite films, and have been limitedly explored. Herein, an approach of double-side crystallization tuning through low-temperature space-restricted annealing in methylammonium-free Sn-Pb perovskite films with over 1 mu m thickness is proposed. More specifically, through simultaneously retarding the crystallization in the top of precursor films and promoting the crystal growth of the bottom of precursor films, high-quality and block-like thick FA(0.85)Cs(0.15)Sn(0.5)Pb(0.5)I(3) perovskite films with improved crystallinity, preferred out-of-plane orientation, and reduced trap density are achieved. Finally, photovoltaic-mode Sn-Pb perovskite NIR photodetectors show a high external quantum efficiency of approximate to 80% at 760-900 nm, a recorded responsivity of 0.53 A W-1, and a high specific detectivity of 6 x 10(12) Jones at 940 nm. This study offers the fundamental understanding of the crystallization kinetics of thick perovskite films and paves the way for perovskite-based emerging NIR photodetection and imaging applications.
机译：解决方案处理的窄带隙SN-PB PEROVSKITES已经示出了它们在近红外（NIR）光电检测中的潜力，作为传统硅和无机化合物的有希望的替代品。为了实现高效的NIR照片，高质量的SN-PB钙钛矿厚膜，具有充分填充，光滑和针孔/无空隙特征，非常适合提高光谱吸收。理解结晶动力学和调整结晶是根本重要的是达到如此高质量的厚Sn-PB PEROVSKITE薄膜，并且有限探索。在此，提出了一种通过低温空间限制退火的双侧结晶调节的方法，提出了具有超过1μM厚度的甲基铵的SN-PB钙钙钛矿膜中的低温空间限制性退火。更具体地，通过同时延迟前体膜的顶部的结晶并促进前体膜底部的晶体生长，高质量和嵌段状厚FA（0.85）Cs（0.15）Sn（0.5）Pb（0.5） I（3）具有改进的结晶度的钙钛矿膜，实现了优选的外平面取向和降低的捕集密度。最后，光伏 - 模式Sn-PB PEROVSKITE NIR光电探测器显示出高于760-900nm的高近似的外部量子效率，记录响应度为0.53A W-1，高特定检测率为6×10（12）琼斯在940 nm。本研究提供了对厚钙钛矿薄膜结晶动力学的根本理解，并为基于钙纺的新兴的NIR光检测和成像应用铺平了道路。

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  • 来源
    《Advanced Functional Materials》 |2021年第28期|2010532.1-2010532.10|共10页
  • 作者

    Liu Hui; Zhu Hugh Lu; Wang Zishuai; Wu Xiao; Huang Zhanfeng; Huqe Md Rashedul; Zapien Juan Antonio; Lu Xinhui; Choy Wallace C. H.;

  • 作者单位

    Univ Hong Kong Dept Elect & Elect Engn Pokfulam Rd Hong Kong 999077 Peoples R China;

    Univ Hong Kong Dept Elect & Elect Engn Pokfulam Rd Hong Kong 999077 Peoples R China|Sun Yat Sen Univ Sch Microelect Sci & Technol Zhuhai 519082 Guangdong Peoples R China;

    Univ Hong Kong Dept Elect & Elect Engn Pokfulam Rd Hong Kong 999077 Peoples R China;

    Chinese Univ Hong Kong Dept Phys Shatin Hong Kong 999077 Peoples R China;

    Univ Hong Kong Dept Elect & Elect Engn Pokfulam Rd Hong Kong 999077 Peoples R China;

    City Univ Hong Kong Dept Mat Sci & Engn Kowloon Tat Chee Ave Hong Kong 999077 Peoples R China;

    City Univ Hong Kong Dept Mat Sci & Engn Kowloon Tat Chee Ave Hong Kong 999077 Peoples R China;

    Chinese Univ Hong Kong Dept Phys Shatin Hong Kong 999077 Peoples R China;

    Univ Hong Kong Dept Elect & Elect Engn Pokfulam Rd Hong Kong 999077 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    low-temperature space-restricted crystallization; near-infrared photodetectors; Sn-Pb perovskites; thick perovskites;

    机译：低温空间限制结晶;近红外光电探测器;SN-PB PEROVSKITES;厚钙锌矿;

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