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首页> 外文期刊>Advanced Functional Materials >Infrared Proximity Sensors Based on Photo-Induced Tunneling in van der Waals Integration
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Infrared Proximity Sensors Based on Photo-Induced Tunneling in van der Waals Integration

机译：基于van der Waals集成的光沟隧道的红外接近传感器

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摘要

Infrared (IR) detectors based on photo-induced tunneling in van der Waals heterostructures (vdWHs) of graphene/h-BN/graphene or MoS2/h-BN/graphene exhibit extremely low dark currents owing to a large electron barrier. However, a lack of tunneling barrier materials except for h-BN for 2D vdWHs limits their further enhancement. In this study, a broadband detection is reported with high sensitivity and fast photoresponse of IR proximity sensor by a vdW integration (2D-3D) of graphene or MoS2, with NiO/Ni as the IR absorber and hole selective transport layer/counter electrode. The low Schottky barrier height of the reported junctions suppresses dark current with a high detectivity approximate to 10(14) Jones and generates a photocurrent by transporting photo-excited carriers through a low hole barrier at a wide wavelength. Two types of integrated IR proximity sensor applications are developed: a passive sensor (MoS2/NiO/Ni) for the near-IR (NIR) range and an active sensor (Gr/NiO/Ni) for the mid-IR (MIR) range. The former shows a broadband photoresponse to reflect the NIR, while the latter absorbs human body irradiation (2-16 mu m wavelength) with a fast photoresponse of 3.5 s (rise time) and 1.8 s (fall time). The fabricated sensors utilize low power, broadband detection, high sensitivity, fast photoresponse, and large-scale area at room temperature.
机译：基于Phare Der WaaS的隧道的红外（IR）探测器石墨烯/ H-Bn /石墨烯或MOS2 / H-BN /石墨烯的van der WaaS杂交（Vdwhs）由于大的电子屏障而表现出极低的暗电流。然而，除了2D VDWH的H-BN外，缺乏隧道屏障材料限制了它们的进一步增强。在该研究中，通过石墨烯或MOS2的VDW积分（2D-3D），具有高灵敏度和IR邻近传感器的高灵敏度和快速光响应的宽带检测，作为IR吸收器和孔选择性传输层/对电极。报告的结的低肖特基势垒高度抑制了暗电流，具有高探测器近似为10（14）琼松，并通过在宽波长下通过低空穴屏障运输光激发器载体来产生光电流。开发了两种类型的集成IR接近传感器应用：用于近IR（NIR）范围的无源传感器（MOS2 / NIO / NI）和中IR（MIR）范围的有源传感器（GR / NIO / NI） 。前者显示了宽带光响应以反射NIR，而后者吸收人体照射（2-16μm波长），快速光响应为3.5 s（上升时间）和1.8 s（下降时间）。制造的传感器在室温下利用低功率，宽带检测，高灵敏度，快速光响应和大尺寸区域。

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  • 来源
    《Advanced Functional Materials》 |2021年第31期|2100966.1-2100966.9|共9页
  • 作者

    Kim Young Rae; Phan Thanh Luan; Cho Kye Whan; Kang Won Tae; Kim Kunnyun; Lee Young Hee; Yu Woo Jong;

  • 作者单位

    Sungkyunkwan Univ Dept Elect & Comp Engn Suwon 16419 South Korea;

    Sungkyunkwan Univ Dept Elect & Comp Engn Suwon 16419 South Korea;

    Sungkyunkwan Univ Dept Elect & Comp Engn Suwon 16419 South Korea;

    Sungkyunkwan Univ Dept Elect & Comp Engn Suwon 16419 South Korea;

    Korea Elect Technol Inst Seongnam 13509 South Korea;

    Sungkyunkwan Univ Dept Phys Dept Energy Sci Suwon 16419 South Korea|Sungkyunkwan Univ Inst Basic Sci IBS IBS Ctr Integrated Nanostruct Phys Suwon 16419 South Korea;

    Sungkyunkwan Univ Dept Elect & Comp Engn Suwon 16419 South Korea;

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  • 正文语种 eng
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  • 关键词

    2D materials; infrared; photodetectors; sensors; tunneling;

    机译：2D材料;红外线;光电探测器;传感器;隧道;

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