• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Catalyst-Free Growth of Atomically Thin Bi_2O_2Se Nanoribbons for High-Performance Electronics and Optoelectronics
【24h】

Catalyst-Free Growth of Atomically Thin Bi_2O_2Se Nanoribbons for High-Performance Electronics and Optoelectronics

机译：用于高性能电子和光电子的原子薄BI_2O_2SE纳米纤维的无催化剂生长

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

1D materials have attracted significant research interest due to their unique quantum confinement effects and edge-related properties. Atomically thin 1D nanoribbons are particularly interesting because it is a valuable platform with the physical limits of both thickness and width. Here, a catalyst-free growth method is developed and the growth of Bi2O2Se nanostructures with tunable dimensionality is achieved. Significantly, Bi2O2Se nanoribbons with a thickness down to 0.65 nm, corresponding to a monolayer, are successfully grown for the first time. Electrical and optoelectronic measurements show that Bi2O2Se nanoribbons possess decent performance in terms of mobility, on/off ratio, and photoresponsivity, suggesting their promise for devices. This work not only reports a new method for the growth of atomically thin nanoribbons but also provides a platform to study properties and applications of such nanoribbon materials at a thickness limit.
机译：由于它们独特的量子限制效应和与边缘相关性能，1D材料引起了显着的研究兴趣。 原子上薄的1D纳米队特别有趣，因为它是一个有价值的平台，具有厚度和宽度的物理限制。 这里，达到无催化剂的生长方法，实现了具有可调谐维度的Bi2O2Se纳米结构的生长。 值得注意的是，厚度为0.65nm的Bi2O2Se纳米纤维增长，对应于单层，首次成功地生长。 电气和光电测量表明，Bi2O2Se纳米队在移动性，开/关比和光反对子方面具有体面的性能，表明他们对设备的承诺。 这项工作不仅向原子薄纳米波巴的生长报告了一种新的方法，而且还提供了一种在厚度限制下研究这种纳米骨材料的性能和应用的平台。

著录项

  • 来源
    《Advanced Functional Materials》 |2021年第31期|2101170.1-2101170.7|共7页
  • 作者

    Khan Usman; Tang Lei; Ding Baofu; Yuting Luo; Feng Simin; Chen Wenjun; Khan Muhammad Jahangir; Liu Bilu; Cheng Hui-Ming;

  • 作者单位

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Shenzhen Geim Graphene Ctr Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Inst Mat Res Shenzhen 518055 Peoples R China;

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Shenzhen Geim Graphene Ctr Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Inst Mat Res Shenzhen 518055 Peoples R China;

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Shenzhen Geim Graphene Ctr Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Inst Mat Res Shenzhen 518055 Peoples R China;

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Shenzhen Geim Graphene Ctr Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Inst Mat Res Shenzhen 518055 Peoples R China;

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Shenzhen Geim Graphene Ctr Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Inst Mat Res Shenzhen 518055 Peoples R China;

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Shenzhen Geim Graphene Ctr Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Inst Mat Res Shenzhen 518055 Peoples R China;

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Shenzhen Geim Graphene Ctr Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Inst Mat Res Shenzhen 518055 Peoples R China;

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Shenzhen Geim Graphene Ctr Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Inst Mat Res Shenzhen 518055 Peoples R China;

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Shenzhen Geim Graphene Ctr Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Inst Mat Res Shenzhen 518055 Peoples R China|Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Bi; O-2; Se-2; catalyst#8208; free growth; chemical vapor deposition; field#8208; effect transistor; monolayer nanoribbons; photodetectors;

    机译：Bi;O-2;SE-2;催化剂＆＃8208;自由增长;化学气相沉积;场＆＃8208;效果晶体管;单层纳米杆;光电探测器;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号