Dual Role of Cu-Chalcogenide as Hole-Transporting Layer and Interface Passivator for p-i-n Architecture Perovskite Solar Cell

Sadhu Anupam; Rai Monika; Salim Teddy; Jin Xin; Tan Joel Ming Rui; Leow Shin Woei; Ahmed Mahmoud G.; Magdassi Shlomo; Mhaisalkar Subodh G.; Wong Lydia Helena

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Dual Role of Cu-Chalcogenide as Hole-Transporting Layer and Interface Passivator for p-i-n Architecture Perovskite Solar Cell

机译：Cu-Chalcogenere作为P-I-N Architecture Perovskite太阳能电池的空穴传输层和界面钝化剂的双重作用

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Inorganic hole-transport layers (HTLs) are widely investigated in perovskite solar cells (PSCs) due to their superior stability compared to the organic HTLs. However, in p-i-n architecture when these inorganic HTLs are deposited before the perovskite, it forms a suboptimal interface quality for the crystallization of perovskite, which reduces device stability, causes recombination, and limits the power conversion efficiency of the device. The incorporation of an appropriate functional group such as sulfur-terminated surface on the HTL can enhance the interface quality due to its interaction with perovskite during the crystallization process. In this work, a bifunctional Al-doped CuS film is wet-deposited as HTL in p-i-n architecture PSC, which besides acting as an HTL also improves the crystallization of perovskite at the interface. Urbach energy and light intensity versus open-circuit voltage characterization suggest the formation of a better-quality interface in the sulfide HTL-perovskite heterojunction. The degradation behavior of the sulfide-HTL-based perovskite devices is studied, where it can be observed that after 2 weeks of storage in a controlled environment, the devices retain close to 95% of their initial efficiency.

机译：由于与有机HTLS相比，由于其优异的稳定性，在钙钛矿太阳能电池（PSC）中广泛研究无机空穴传输层（HTLS）。然而，在P-I-N架构中，当这些无机HTL被沉积在PEROVSKITE之前，它形成了钙钛矿结晶的次优界面质量，这降低了装置稳定性，导致重组，并限制了装置的功率转换效率。在HTL上掺入诸如硫封端表面的硫封端表面可以增强由于其在结晶过程中与Perovskite的相互作用而增强界面质量。在这项工作中，双功能性Al掺杂的CUS膜在P-I-N架构PSC中湿沉积，除了用作HTL之外还改善了界面处的钙钛矿的结晶。 URBACH能量和光强度与开路电压表征建议在硫化物HTL-PEROVSKITE异质结中形成更好的界面。研究了硫化物-HTL基钙钛矿器件的降解行为，可以观察到，在受控环境中储存2周后，该器件将保持接近其初始效率的95％。

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来源
《Advanced Functional Materials》 |2021年第38期|2103807.1-2103807.10|共10页
作者
Sadhu Anupam; Rai Monika; Salim Teddy; Jin Xin; Tan Joel Ming Rui; Leow Shin Woei; Ahmed Mahmoud G.; Magdassi Shlomo; Mhaisalkar Subodh G.; Wong Lydia Helena;
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作者单位

Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|Campus Res Excellence & Technol Enterprise CREATE Singapore 138602 Singapore;

Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|Campus Res Excellence & Technol Enterprise CREATE Singapore 138602 Singapore;

Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore;

Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|Nanyang Technol Univ Energy Res Inst NTU ERIN 50 Nanyang Dr Singapore 637553 Singapore;

Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|Campus Res Excellence & Technol Enterprise CREATE Singapore 138602 Singapore;

Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|Campus Res Excellence & Technol Enterprise CREATE Singapore 138602 Singapore|Nanyang Technol Univ Energy Res Inst NTU ERIN 50 Nanyang Dr Singapore 637553 Singapore;

Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore;

Campus Res Excellence & Technol Enterprise CREATE Singapore 138602 Singapore|Hebrew Univ Jerusalem Inst Chem Casali Ctr Appl Chem Ctr Nanosci & Nanotechnol IL-9190401 Jerusalem Israel;

Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|Campus Res Excellence & Technol Enterprise CREATE Singapore 138602 Singapore|Nanyang Technol Univ Energy Res Inst NTU ERIN 50 Nanyang Dr Singapore 637553 Singapore;

Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|Campus Res Excellence & Technol Enterprise CREATE Singapore 138602 Singapore|Nanyang Technol Univ Energy Res Inst NTU ERIN 50 Nanyang Dr Singapore 637553 Singapore;

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正文语种 eng
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defects; inorganic hole-transport layers; interface passivation; sulfide;

机译：缺陷;无机空穴运输层;界面钝化;硫化物;

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专利

1. New ferrocenyl-containing organic hole-transporting materials for perovskite solar cells in regular (n-i-p) and inverted (p-i-n) architectures [J] . Jia Jingwen, Duan Liangsheng, Chen Yu, RSC Advances . 2019,第1期

机译：用于常规（N-I-P）和倒置（P-I-N）架构的钙钛矿太阳能电池的新的含二氯联苯的有机空穴传输材料
2. New ferrocenyl-containing organic hole-transporting materials for perovskite solar cells in regular (n-i-p) and inverted (p-i-n) architectures [J] . Jingwen Jia, Liangsheng Duan, Yu Chen, RSC Advances . 2019,第1期

机译：用于常规（N-I-P）和倒置（P-I-N）架构的钙钛矿太阳能电池的新的含二氯联苯的有机空穴传输材料
3. Enhanced performance of p-i-n perovskite solar cell via defect passivation of nickel oxide/perovskite interface with self-assembled monolayer [J] . Mann Dilpreet Singh, Patil Pramila, Kwon Sung-Nam, Applied Surface Science . 2021,第Sepa15期

机译：通过缺陷氧化镍/钙钛矿接口与自组装单层的缺陷钝化增强P-I-N PEROVSKITE太阳能电池的性能
4. Sputtering and annealing graphene oxide hole-transporting layer for perovskite solar cells [C] . Lung-Chien Chen, Jia-Ching Lin, Kuan-Lin Lee, International Symposium on Next Generation Electronics . 2018

机译：钙钛矿型太阳能电池溅射退火氧化石墨烯空穴传输层
5. Engineering of Hole Transport and Perovskite Absorber Layers to Achieve High Efficiency and Stable Perovskite Solar Cells [D] . Mabrouk, Sally. 2018

机译：孔运输工程和钙钛矿吸收层，实现高效率和稳定的钙钛矿太阳能电池
6. Efficiency Enhancement of Hybrid Perovskite Solar Cells with MEH-PPV Hole-Transporting Layers [O] . Hsin-Wei Chen, Tzu-Yen Huang, Ting-Hsiang Chang, -1

机译：具有MEH-PPV空穴传输层的混合钙钛矿太阳能电池的效率增强
7. New ferrocenyl-containing organic hole-transporting materials for perovskite solar cells in regular (n-i-p) and inverted (p-i-n) architectures [O] . Jingwen Jia, Liangsheng Duan, Yu Chen, 2019

机译：用于常规（N-I-P）和倒置（P-I-N）架构的钙钛矿太阳能电池的新的含二氯联苯的有机空穴传输材料

Dual Role of Cu-Chalcogenide as Hole-Transporting Layer and Interface Passivator for p-i-n Architecture Perovskite Solar Cell

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