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Robust and High Photoluminescence in WS_2 Monolayer through In Situ Defect Engineering

机译：通过原位缺陷工程在WS_2单层中的鲁棒和高光致发光

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摘要

The photoluminescence quantum yield (PLQY) of the chemical vapor deposition (CVD) grown transition-metal dichalcogenides (TMDs) films is often much lower than their mechanically exfoliated counterparts, making the coexistence of large-area and high PLQY in TMDs monolayer a huge challenge. Here, an in situ defect engineering strategy is reported to fundamentally dilutes the impact of intrinsic sulfur vacancy on tungsten disulfide (WS2) monolayer. By ingeniously incorporating oxygen atoms in the sulfur vacancy sites of WS2 lattice via the CVD method, oxygen doped WS2 monolayer exhibits remarkably improved optical properties. The PLQY is uniformly enhanced by nearly two orders and can reach up to 9.3%, which is even higher than mechanically exfoliated counterparts. Besides, strong W-O bonds endow materials with superior environment stability, and the high PLQY could persist with an endurance of up to 3 months under ambient conditions without any protection. More in-depth insights from the first-principle calculations illustrate that the enhancement mechanism is the synthetic action of the suppression of nonradiative recombination and conversion from trion to neutral, and the excellent stability arises from repaired saturated coordination bonds at sulfur vacancy sites. This method opens up more possibilities for both fundamental exciton physics and optoelectronics applications.
机译：化学气相沉积（CVD）生长过渡 - 金属二甲基甲基化物（TMDS）膜的光致发光量子产率（PLQY）通常远低于其机械剥离的对应物，使得大面积和高PLQY在TMDS Monolayer中的一个巨大挑战中的共存。这里，据报道，原位缺陷工程策略从根本上稀释了固有硫空位对钨硫化物（WS2）单层的影响。通过通过CVD方法巧妙地将氧原子掺入WS2晶格的硫空位位点中，氧掺杂WS2单层表现出显着改善的光学性质。 PLQY通过近两个订单均匀增强，可达高达9.3％，甚至比机械剥离对应物高。此外，强大的W-O键赋予具有卓越环境稳定性的材料，高plqy可以在环境条件下持续到长达3个月的耐力，没有任何保护。来自第一原理计算的更深入的见解表明，增强机构是抑制非抗体重组和从下降转化率的合成作用，并且在硫空位位点的修复饱和配位键产生了优异的稳定性。该方法为基本兴奋性物理和光电子应用开辟了更多的可能性。

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  • 来源
    《Advanced Functional Materials》 |2021年第38期|2105339.1-2105339.10|共10页
  • 作者

    Cui Qilong; Luo Ziyu; Cui Qirui; Zhu Wen; Shou Hongwei; Wu Chuanqiang; Liu Zhanfeng; Lin Yunxiang; Zhang Pengjun; Wei Shiqiang; Yang Hongxin; Chen Shuangming; Pan Anlian; Song Li;

  • 作者单位

    Univ Sci & Technol CAS Ctr Excellence Nanosci Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China|Chinese Acad Sci Ningbo Inst Mat Engn & Technol Ningbo 315201 Zhejiang Peoples R China|Univ Nottingham Ningbo Fac Sci & Engn Ningbo 315201 Zhejiang Peoples R China;

    Hunan Univ Coll Mat Sci & Engn State Key Lab Chemobiosensing & Chemometr Key Lab Micronano Phys & Technol Hunan Prov Changsha 410082 Hunan Peoples R China;

    Univ Sci & Technol CAS Ctr Excellence Nanosci Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    Univ Sci & Technol CAS Ctr Excellence Nanosci Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China|Univ Sci & Technol China Dept Mat Sci & Engn Hefei Natl Lab Phys Sci Microsc Hefei 230026 Anhui Peoples R China;

    Anhui Univ Anhui Key Lab Informat Mat & Devices Inst Phys Sci & Informat Technol Hefei 230601 Anhui Peoples R China;

    Univ Sci & Technol CAS Ctr Excellence Nanosci Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    Anhui Univ Anhui Key Lab Informat Mat & Devices Inst Phys Sci & Informat Technol Hefei 230601 Anhui Peoples R China;

    Univ Sci & Technol CAS Ctr Excellence Nanosci Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    Univ Sci & Technol CAS Ctr Excellence Nanosci Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    Chinese Acad Sci Ningbo Inst Mat Engn & Technol Ningbo 315201 Zhejiang Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China;

    Univ Sci & Technol CAS Ctr Excellence Nanosci Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

    Hunan Univ Coll Mat Sci & Engn State Key Lab Chemobiosensing & Chemometr Key Lab Micronano Phys & Technol Hunan Prov Changsha 410082 Hunan Peoples R China;

    Univ Sci & Technol CAS Ctr Excellence Nanosci Natl Synchrotron Radiat Lab Hefei 230029 Anhui Peoples R China;

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  • 正文语种 eng
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  • 关键词

    chemical vapor deposition; defects engineering; photoluminescence quantum yield; stability; transition-metal dichalcogenides;

    机译：化学气相沉积;缺陷工程;光致发光量子产率;稳定性;过渡 - 金属二甲硅藻;

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