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首页> 外文期刊>Advanced Functional Materials >Dopant Engineering for Spiro-OMeTAD Hole-Transporting Materials towards Efficient Perovskite Solar Cells
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Dopant Engineering for Spiro-OMeTAD Hole-Transporting Materials towards Efficient Perovskite Solar Cells

机译：螺旋Ometad孔输送材料的掺杂工程朝向高效的Perovskite太阳能电池

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摘要

One of the most prominent hole-transporting material (HTM) for hybrid perovskite solar cells has been 2,2 '',7,7 ''-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9 '-spirobifluorene (spiro-OMeTAD), which is commonly doped with metal bis(trifluoromethylsulfonyl)imide (M(TFSI)(n)) salts that contribute to generating the active radical cation HTM species. The underlying role of the metal cation, however, remains elusive. Here, the effect of metal cations (M = Li, Zn, Ca, Cu, and Sr) on doping spiro-OMeTAD is analyzed by a combination of techniques, including electron paramagnetic resonance spectroscopy and cyclic voltammetry, which is complemented by photovoltaic device and hole mobility analysis. As a result, the authors reveal the superiority of Zn(TFSI)(2) salts in device performances as compared to the others, including redox-active Cu(TFSI)(2). This analysis thereby unravels new design principles for dopant engineering in HTMs for hybrid perovskite photovoltaics.
机译：用于杂交钙钛矿太阳能电池的最突出的空穴传输材料（HTM）之一已经是2,2''，7,7'' - 左[N，N-DI（4-甲氧基苯基）氨基] -9,9' - 氟基氟（螺醚），通常掺杂有金属双（三氟甲基磺酰基）酰亚胺（M（TFSI）（N））盐，其有助于产生活性自由基HTM物种。 然而，金属阳离子的潜在作用仍然难以捉摸。 这里，通过技术的组合分析了金属阳离子（M = Li，Zn，Ca，Ca，Cu，Cu，Cu和Sr）的效果，包括电子顺磁共振光谱和循环伏安法，其被光伏器件互补 空洞流动性分析。 结果，与其他相比，作者揭示了Zn（TFSI）（2）盐在装置性能中的优越性，包括氧化还原活性Cu（TFSI）（2）。 这分析从而解开了HTMS用于杂交钙钛矿光伏的掺杂工程的新设计原理。

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  • 来源
    《Advanced Functional Materials》 |2021年第45期|2102124.1-2102124.7|共7页
  • 作者

    Seo Ji-Youn; Akin Seckin; Zalibera Michal; Preciado Marco A. Ruiz; Kim Hui-Seon; Zakeeruddin Shaik M.; Millc Jovana V; Graetzel Michael;

  • 作者单位

    Pusan Natl Univ Dept Nano Fus Technol Busan 46241 South Korea|Ecole Polytech Fed Lausanne EPFL Inst Chem Sci & Engn Lab Photon & Interfaces CH-1015 Lausanne Switzerland|Pusan Natl Univ BioIT Fus Technol Res Inst Busan 46241 South Korea;

    Karamanoglu Mehmetbey Univ Dept Met & Mat Engn TR-70100 Karaman Turkey;

    Slovak Univ Technol Bratislava Fac Chem & Food Technol Inst Phys Chem & Chem Phys Radlinskeho 9 Bratislava 81237 1 Slovakia;

    Ecole Polytech Fed Lausanne EPFL Inst Chem Sci & Engn Lab Photon & Interfaces CH-1015 Lausanne Switzerland;

    Inha Univ Dept Chem Incheon 22212 South Korea;

    Ecole Polytech Fed Lausanne EPFL Inst Chem Sci & Engn Lab Photon & Interfaces CH-1015 Lausanne Switzerland;

    Ecole Polytech Fed Lausanne EPFL Inst Chem Sci & Engn Lab Photon & Interfaces CH-1015 Lausanne Switzerland|Univ Fribourg Adolphe Merkle Inst CH-1700 Fribourg Switzerland;

    Ecole Polytech Fed Lausanne EPFL Inst Chem Sci & Engn Lab Photon & Interfaces CH-1015 Lausanne Switzerland;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    hole mobility; hole transport materials; M-TFSI; (n); photovoltaics; p-type dopants;

    机译：孔移动;孔运输材料;M-TFSI;（n）;光伏;p型掺杂剂;

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