首页> 外文期刊>Advanced Functional Materials >Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe_2 Field-Effect Transistors
【24h】

Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe_2 Field-Effect Transistors

机译:几层PTSE_2场效应晶体管中的负极和正光电导性的共存

获取原文
获取原文并翻译 | 示例
           

摘要

Platinum diselenide (PtSe2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by environmental pressure. Indeed, positive photoconductivity observed in high vacuum converts to negative photoconductivity when the pressure is raised. Density functional theory calculations confirm that physisorbed oxygen molecules on the PtSe2 surface act as acceptors. The desorption of oxygen molecules from the surface, caused by light irradiation, leads to decreased carrier concentration in the channel conductivity. The understanding of the charge transfer occurring between the physisorbed oxygen molecules and the PtSe2 film provides an effective route for modulating the density of carriers and the optical properties of the material.
机译:铂二硒化物(PtSe2)与超薄沟道区的场效应晶体管表现出p型导电率对温度和环境压力敏感。暴露于超连续白色光源揭示在同一设备正与负的光电导性并存。一种类型的光电导性的比其他优势是由环境压力来控制。实际上,正光电导在高真空中的换算结果为负的光电导观察时,压力升高。密度泛函理论计算确认的PtSe2表面充当受主的是物理吸附的氧分子。氧分子从表面脱附,造成通过光照射,导致在沟道导电率降低载流子浓度。物理吸附的氧分子和PtSe2膜之间发生的电荷转移的理解提供了用于调节的载体和该材料的光学性质的密度的有效路由。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号