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首页> 外文期刊>Advanced Functional Materials >Strong Interlayer Transition in Few-Layer lnSe/PdSe_2 van der Waals Heterostructure for Near-Infrared Photodetection
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Strong Interlayer Transition in Few-Layer lnSe/PdSe_2 van der Waals Heterostructure for Near-Infrared Photodetection

机译：在几层LNSE / PDSE_2 van der Waals异质结构进行强大的层间过渡，用于近红外光电探测

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摘要

Near infrared (NIR) photodetectors based on 2D materials are widely studied for their potential application in next generation sensing, thermal imaging, and optical communication. Construction of van der Waals (vdWs) heterostructure provides a tremendous degree of freedom to combine and extend the features of 2D materials, opening up new functionalities on photonic and optoelectronic devices. Herein, a type-II InSe/PdSe2 vdWs heterostructure with strong interlayer transition for NIR photodetection is demonstrated. Strong interlayer transition between InSe and PdSe2 is predicted via density functional theory calculation and confirmed by photoluminance spectroscopy and Kelvin probe force microscopy. The heterostructure exhibits highly sensitive photodetection in NIR region up to 1650 nm. The photoresponsivity, detectivity, and external quantum efficiency at this wavelength respectively reaches up to 58.8 A W-1, 1 x 10(10) Jones, and 4660%. The results suggest that the construction of vdWs heterostructure with strong interlayer transition is a promising strategy for infrared photodetection, and this work paves the way to developing high-performance optoelectronic devices based on 2D vdWs heterostructures.
机译：基于2D材料的近红外（NIR）光电探测器广泛研究了它们在下一代感测，热成像和光学通信中的潜在应用。范德华（VDWS）的构建异质结构提供了相结合的巨大自由度，并延长了2D材料的特征，在光子和光电器件上开辟了新功能。这里，证明了具有强夹层光检测的强夹层转变的II型II型Inse / Pdse2 VDWS异质结构。通过密度泛函理论计算预测内部和PDSE2之间的强的层间转变，并通过光滤光谱和开尔文探针力显微镜确认。异质结构在NIR地区显示出高达1650nm的高敏感的光检测。该波长的光反应性，探测和外部量子效率分别达到58.8V-1,1，1×10（10）琼斯和4660％。结果表明，具有强大的中间层过渡的VDWS异质结构是红外光电探测的有希望的策略，这项工作铺平了基于2D VDWS异质结构开发高性能光电器件的方法。

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  • 来源
    《Advanced Functional Materials》 |2021年第43期|2104143.1-2104143.8|共8页
  • 作者

    Ahmad Waqas; Liu Jidong; Jiang Jizhou; Hao Qiaoyan; Wu Di; Ke Yuxuan; Gan Haibo; Laxmi Vijay; Ouyang Zhengbiao; Ouyang Fangping; Wang Zhuo; Liu Fei; Qi Dianyu; Zhang Wenjing;

  • 作者单位

    Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China;

    Sun Yat Sen Univ Sch Elect & Informat Technol State Key Lab Optoelect Mat & Technol Guangdong Prov Key Lab Display Mat & Technol Guangzhou 510275 Peoples R China;

    Wuhan Inst Technol Sch Chem & Environm Engn Sch Environm Ecol & Biol Engn Wuhan 430205 Hubei Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China;

    Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen 518060 Peoples R China|Shenzhen Univ THz Tech Res Ctr Key Lab Optoelect Devices & Syst Minist Educ & Guangdong Prov Shenzhen 518060 Peoples R China;

    Cent South Univ Sch Phys & Elect Hunan Key Lab Super Microstruct & Ultrafast Proc Changsha 410083 Hunan Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China;

    Sun Yat Sen Univ Sch Elect & Informat Technol State Key Lab Optoelect Mat & Technol Guangdong Prov Key Lab Display Mat & Technol Guangzhou 510275 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China;

    Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    2D materials; interlayer transition; near infrared photodetectors; photoresponsivity; van der Waals heterojunction;

    机译：2D材料;层间过渡;近红外光电探测器;光响应性;van der waals异质结;

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