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首页> 外文期刊>Advanced Functional Materials >Orthorhombic Ti_2O_3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide
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Orthorhombic Ti_2O_3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

机译：斜方晶Ti_2O_3：多晶型窄带隙铁磁氧化物。

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摘要

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (approximate to 0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.
机译：在自旋电子学中高度寻求磁性半导体，其不仅允许像传统电子学中那样控制电荷载流子，而且还可以控制自旋状态。但是，几乎所有已知的磁性半导体都具有大于1 eV的带隙，这限制了它们在长波长范围内的应用。在这项工作中，正交晶结构的Ti2O3薄膜的发现被报道为独特的窄带隙（约0.1 eV）铁磁氧化物半导体。相反，众所周知的刚玉结构的Ti 2 O 3多晶型物具有反铁磁基态。对外延Ti2O3薄膜的全面研究揭示了结构，电学和磁学性质之间的强相关性。发现新的斜方晶Ti 2 O 3多晶型物为n型，具有很高的电子浓度，而块状的三角形结构Ti 2 O 3为p型。更有趣的是，与三方块状Ti2O3的反铁磁性基态相反，在正交晶体Ti2O3中观察到了出乎意料的铁磁性，其转变温度远高于室温，这通过X射线磁性圆二色性测量得到了证实。使用第一性原理计算，铁磁性归因于正交晶形的Ti2O3中特定类型的氧空位。在正交晶结构的Ti2O3中观察到的室温铁磁性，表明了通过选择性稳定多晶型物相来控制外延氧化膜中磁性的新途径。

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  • 来源
    《Advanced Functional Materials》 |2018年第7期|65-75|共11页
  • 作者

    Li Yangyang; Weng Yakui; Yin Xinmao; Yu Xiaojiang; Kumar S. R. Sarath; Wehbe Nimer; Wu Haijun; Alshareef Husam N.; Pennycook Stephen J.; Breese Mark B. H.; Chen Jingsheng; Dong Shuai; Wu Tom;

  • 作者单位

    King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia;

    Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China;

    Natl Univ Singapore, Singapore Synchrotron Light Source, 5 Res Link, Singapore 117603, Singapore;

    Natl Univ Singapore, Singapore Synchrotron Light Source, 5 Res Link, Singapore 117603, Singapore;

    King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia;

    King Abdullah Univ Sci & Technol, Imaging & Characterizat Core Lab, Thuwal 239556900, Saudi Arabia;

    Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore;

    King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia;

    Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore;

    Natl Univ Singapore, Singapore Synchrotron Light Source, 5 Res Link, Singapore 117603, Singapore;

    Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore;

    Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China;

    King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia;

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    ferromagnetic oxides; first-principles calculations; narrow bandgaps; orthorhombic; Ti2O3;

    机译：铁磁性氧化物;第一性原理计算;窄带隙;斜方;Ti2O3;

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