• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >All-Solution-Processed Cu_2ZnSnS_4 Solar Cells with Self-Depleted Na_2S Back Contact Modification Layer
【24h】

All-Solution-Processed Cu_2ZnSnS_4 Solar Cells with Self-Depleted Na_2S Back Contact Modification Layer

机译：具有自耗尽Na_2S背接触修饰层的全溶液处理Cu_2ZnSnS_4太阳能电池

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The thin-film photovoltaic material Cu2ZnSnS4 (CZTS) has drawn worldwide attention in recent years due to its earth-abundant, nontoxic element constitution, and remarkable photovoltaic performance. Although state-of-the-art power conversion efficiency is achieved by hydrazine-based methods, effort to fabricate such devices in a high throughput, environmental-friendly way is still highly desired. Here a hydrazine-free all-solution-processed CZTS solar cell with Na2S self-depleted back contact modification layer for the first time is demonstrated, using a ball-milled CZTS as light absorber, low-temperature solution-processed ZnO electron-transport layer as well as silver-nanowire transparent electrode. The inserting of Na2S self-depleted layer is proven to effectively stabilize the CZTS/Mo interface by eliminating a detrimental phase segregation reaction between CZTS and Mo-coated soda lime glass, thus leading to a better crystallinity of CZTS light absorbing layer, enhanced carrier transportation at CZTS/Mo interface as well as a smaller series resistance. Furthermore, the self-depletion feature of the Na2S modification layer also averts hole-transportation barrier within the devices. The results show the vital importance of interfacial engineering for these CZST devices and the Na2S interface layer can be extended to other optoelectronic devices using Mo contact.
机译：薄膜光伏材料Cu2ZnSnS4（CZTS）近年来因其富含地球，无毒的元素构成和出色的光伏性能而引起了全球关注。尽管通过基于肼的方法实现了最先进的功率转换效率，但仍非常需要以高通量，环境友好的方式来制造这种器件。这里首次展示了使用球磨CZTS作为光吸收剂，低温溶液处理的ZnO电子传输层，无Na2S自耗尽背接触改性层的无肼全溶液处理的CZTS太阳能电池以及银纳米线透明电极。事实证明，插入Na2S自耗尽层可有效消除CZTS和涂有Mo的钠钙玻璃之间有害的相分离反应，从而有效地稳定CZTS / Mo界面，从而提高CZTS吸光层的结晶度，提高载流子传输CZTS / Mo接口处的电阻以及较小的串联电阻。此外，Na 2 S修饰层的自耗尽特征还避免了器件内的空穴传输势垒。结果表明，界面工程对这些CZST器件至关重要，并且可以使用Mo触点将Na2S界面层扩展到其他光电器件。

著录项

  • 来源
    《Advanced Functional Materials》 |2018年第14期|1703369.1-1703369.10|共10页
  • 作者

    Gu Youchen; Shen Heping; Ye Chen; Dai Xuezeng; Cui Qian; Li Jianbao; Hao Feng; Hao Xiaojing; Lin Hong;

  • 作者单位

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

    Australian Natl Univ, Res Sch Engn, Ctr Sustainable Energy Syst, Canberra, ACT 2601, Australia;

    Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China;

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

    Hainan Univ, Mat & Chem Engn Inst, State Key Lab Marine Resource Utilizat South Chin, Haikou 570228, Hainan, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Sichuan, Peoples R China;

    Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Australian Ctr Adv Photovolta, Sydney, NSW 2052, Australia;

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    photovoltaic devices; solar cells; structure-property relationships; surface modification; thin films;

    机译：光电器件;太阳能电池;结构-性能关系;表面改性;薄膜;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号