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首页> 外文期刊>Advanced Functional Materials >Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga_2O_3 Heterojuction Microwire
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Piezo-Phototronic Effect Modulated Deep UV Photodetector Based on ZnO-Ga_2O_3 Heterojuction Microwire

机译：ZnO-Ga_2O_3异质结微丝的压电光电效应调制深紫外光电探测器

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摘要

A strain modulated solar-blinded photodetector (PD) based on ZnO-Ga2O3 core-shell heterojuction microwire is developed. This PD is highly sensitive to deep UV light centered at 261 nm. It performs ultrahigh sensitivity and spectral selectivity, which can response to rare weak deep UV light (approximate to 1.3 mu w cm(-2)) and almost no response to visible light wavelength ranges. Moreover, by using the piezo-phototronic effect, the deep UV current response is enhanced to about three times under -0.042% static strain. This is a three way coupling effect among pizoelectric polarization, simiconductor properties, and optical excitation, which exists in noncentral symmetric wurtzite semiconductors such as ZnO, GaN, and CdS. By modulating the energy band diagrams and charge carriers in the junction area upon straining, the optoelectronic processes are regulated. The strain induced piezopotential modulates carrier transport in the heterostructure, which improves the response of the PD, with potential applications for health monitoring, smart systems, deep space exploration, and security communication.
机译：研制了基于ZnO-Ga2O3核壳异质结微线的应变调制太阳盲光电探测器。该PD对以261 nm为中心的深紫外光高度敏感。它具有超高的灵敏度和光谱选择性，可以响应稀有的深紫外光（大约1.3μw cm（-2）），并且几乎不响应可见光波长范围。此外，通过使用压电效应，在-0.042％静态应变下，深紫外电流响应可增强至大约三倍。这是在非中心对称纤锌矿型半导体（例如ZnO，GaN和CdS）中存在的压电极化，半导体特性和光激发之间的三向耦合效应。通过在应变时调制能带图和结区中的电荷载流子，可以调节光电过程。应变感应的压电势能调节异质结构中的载流子传输，从而改善PD的响应，并在健康监测，智能系统，深空探测和安全通信方面具有潜在的应用。

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  • 来源
    《Advanced Functional Materials》 |2018年第14期|1706379.1-1706379.6|共6页
  • 作者

    Chen Mengxiao; Zhao Bin; Hu Guofeng; Fang Xiaosheng; Wang Hui; Wang Lei; Luo Jun; Han Xun; Wang Xiandi; Pan Caofeng; Wang Zhong Lin;

  • 作者单位

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Beihang Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Aerosp Mat & Performance, Beijing 100191, Peoples R China;

    Tianjin Univ Technol, Ctr Elect Microscopy, Tianjin 300384, Peoples R China;

    Tianjin Univ Technol, Ctr Elect Microscopy, Tianjin 300384, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    deep UV photodetectors; heterojuction microwires; piezo-phototronic effects; ZnO-Ga2O3;

    机译：深紫外光电探测器;异质结微丝;压电效应;ZnO-Ga2O3;

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