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首页> 外文期刊>Advanced Functional Materials >Carrier Modulation of Ambipolar Few-Layer MoTe_2 Transistors by MgO Surface Charge Transfer Doping
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Carrier Modulation of Ambipolar Few-Layer MoTe_2 Transistors by MgO Surface Charge Transfer Doping

机译：MgO表面电荷转移掺杂对双极少层MoTe_2晶体管的载流子调制

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摘要

Semiconducting molybdenum ditelluride (2H-MoTe2), a fast-emerging 2D material with an appropriate band gap and decent carrier mobility, is configured as field-effect transistors and is the focus of substantial research interest, showing hole-dominated ambipolar characteristics. Here, carrier modulation of ambipolar few-layer MoTe2 transistors is demonstrated utilizing magnesium oxide (MgO) surface charge transfer doping. By carefully adjusting the thickness of MgO film and the number of MoTe2 layers, the carrier polarity of MoTe2 transistors from p-type to n-type can be reversely controlled. The electron mobility of MoTe2 is significantly enhanced from 0.1 to 20 cm(2) V-1 s(-1) after 37 nm MgO film doping, indicating a greatly improved electron transport. The effective carrier modulation enables to achieve high-performance complementary inverters with high DC gain of 25 and photodetectors based on few-layer MoTe2 flakes. The results present an important advance toward the realization of electronic and optoelectronic devices based on 2D transition-metal dichalcogenide semiconductors.
机译：半导体二碲化钼（2H-MoTe2）是一种快速出现的2D材料，具有合适的带隙和适当的载流子迁移率，被配置为场效应晶体管，并且受到大量研究的关注，显示出以空穴为主导的双极性特性。在此，利用氧化镁（MgO）表面电荷转移掺杂对双极性多层MoTe2晶体管的载流子调制进行了演示。通过仔细调节MgO膜的厚度和MoTe2层的数量，可以反向控制MoTe2晶体管从p型到n型的载流子极性。在37 nm MgO膜掺杂后，MoTe2的电子迁移率从0.1显着提高到20 cm（2）V-1 s（-1），表明电子传输大大改善。有效的载波调制可实现具有> 25的高DC​​增益的高性能互补逆变器和基于多层MoTe2薄片的光电检测器。结果为基于2D过渡金属二卤化半导体的电子和光电器件的实现提供了重要的进展。

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  • 来源
    《Advanced Functional Materials》 |2018年第15期|1704539.1-1704539.7|共7页
  • 作者

    Luo Wei; Zhu Mengjian; Peng Gang; Zheng Xiaoming; Miao Feng; Bai Shuxin; Zhang Xue-Ao; Qin Shiqiao;

  • 作者单位

    Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China;

    Natl Univ Def Technol, Coll Aerosp Sci & Engn, Changsha 410073, Hunan, Peoples R China;

    Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China;

    Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China;

    Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Natl Univ Def Technol, Coll Aerosp Sci & Engn, Changsha 410073, Hunan, Peoples R China;

    Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China;

    Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    carrier modulation; MgO; MoTe2 transistors; surface charge transfer doping;

    机译：载流子调制;MgO;MoTe2晶体管;表面电荷转移掺杂;

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