机译:单极非易失性有机存储器件的时变电阻开关行为研究
Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South Korea;
Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South Korea;
Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South Korea;
Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South Korea;
Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South Korea;
Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South Korea;
Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South Korea;
Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South Korea;
organic memory devices; time-dependent resistive switching; unipolar resistive memory devices; Weibull distribution;
机译:用于非易失性存储应用的La_2Mo_2O_9薄膜中的单极电阻切换特性和缩放行为
机译:由各种缺陷类型控制的Pt / LixZn1-xO / Pt电阻随机存取存储器件的单极电阻切换行为
机译:由各种缺陷类型控制的Pt / Li_xZn_(1-x)O / Pt电阻随机存取存储器件的单极电阻切换行为
机译:非易失性存储器件中ZnO / SiO
机译:金属/ pr钙锰矿界面中的电场感应电阻切换:未来非易失性存储设备的模型。
机译:低功耗非易失性器件应用中还原氧化石墨烯存储单元的电阻切换行为
机译:通过单极电阻切换在对称有机植物植物植物纳米级异质体中的单极电阻切换