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Precursor Engineering for All-Inorganic CsPbI_2Br Perovskite Solar Cells with 14.78% Efficiency

机译:全无机CsPbI_2Br钙钛矿太阳能电池的前体工程,效率为14.78%

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摘要

The optoelectronic properties of perovskite films are closely related to the film quality, so depositing dense, uniform, and stable perovskite films is crucial for fabricating high-performance perovskite solar cells (PSCs). CsPbI2Br perovskite, prized for its superb stability toward light soaking and thermal aging, has received a great deal of attention recently. However, the air instability and poor performance of CsPbI2Br PSCs are hindering its further progress. Here, an approach is reported for depositing high-quality CsPbI2Br films via the Lewis base adducts PbI2(DMSO) and PbBr2(DMSO) as precursors to slow the crystallization of the perovskite film. This process produces CsPbI2Br films with large-scale crystalline grains, flat surfaces, low defects, and long carrier lifetimes. More interestingly, PbI2(DMSO) and PbBr2(DMSO) adducts could significantly improve the stability of CsPbI2Br films in air. Using films prepared by this technique, a power conversion efficiency (PCE) of 14.78% is obtained in CsPbI2Br PSCs, which is the highest PCE value reported for CsPbI2Br-based PSCs to date. In addition, the PSCs based on DMSO adducts show an extended operational lifetime in air. These excellent performances indicate that preparing high-quality inorganic perovskite films by using DMSO adducts will be a potential method for improving the performance of other inorganic PSCs.
机译:钙钛矿薄膜的光电特性与薄膜质量密切相关,因此沉积致密,均匀和稳定的钙钛矿薄膜对于制造高性能钙钛矿太阳能电池(PSC)至关重要。 CsPbI2Br钙钛矿因其对光浸泡和热老化的出色稳定性而倍受赞誉,最近受到了广泛的关注。但是,CsPbI2Br PSC的空气不稳定和性能不佳阻碍了它的进一步发展。在这里,报道了一种通过路易斯碱加合物PbI2(DMSO)和PbBr2(DMSO)作为前体沉积高品质CsPbI2Br薄膜的方法,以减缓钙钛矿薄膜的结晶。该方法生产的CsPbI2Br膜具有大晶粒,平坦的表面,低缺陷和较长的载流子寿命。更有趣的是,PbI2(DMSO)和PbBr2(DMSO)加合物可以显着提高CsPbI2Br薄膜在空气中的稳定性。使用通过该技术制备的薄膜,CsPbI2Br PSC中的功率转换效率(PCE)为14.78%,这是迄今为止基于CsPbI2Br的PSC所报道的最高PCE值。此外,基于DMSO加合物的PSC在空气中的使用寿命更长。这些优异的性能表明,使用DMSO加合物制备高质量的无机钙钛矿薄膜将是改善其他无机PSC性能的潜在方法。

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  • 来源
    《Advanced Functional Materials》 |2018年第39期|1803269.1-1803269.10|共10页
  • 作者单位

    Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Shaanxi Key Lab Adv Energy Devices,Sch Mat Sci &, Key Lab Appl Surface & Colloid Chem,Minist Educ, Xian 710119, Shaanxi, Peoples R China;

    Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Shaanxi Key Lab Adv Energy Devices,Sch Mat Sci &, Key Lab Appl Surface & Colloid Chem,Minist Educ, Xian 710119, Shaanxi, Peoples R China;

    Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Shaanxi Key Lab Adv Energy Devices,Sch Mat Sci &, Key Lab Appl Surface & Colloid Chem,Minist Educ, Xian 710119, Shaanxi, Peoples R China;

    Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Shaanxi Key Lab Adv Energy Devices,Sch Mat Sci &, Key Lab Appl Surface & Colloid Chem,Minist Educ, Xian 710119, Shaanxi, Peoples R China;

    Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Shaanxi Key Lab Adv Energy Devices,Sch Mat Sci &, Key Lab Appl Surface & Colloid Chem,Minist Educ, Xian 710119, Shaanxi, Peoples R China;

    Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Shaanxi Key Lab Adv Energy Devices,Sch Mat Sci &, Key Lab Appl Surface & Colloid Chem,Minist Educ, Xian 710119, Shaanxi, Peoples R China;

    Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Shaanxi Key Lab Adv Energy Devices,Sch Mat Sci &, Key Lab Appl Surface & Colloid Chem,Minist Educ, Xian 710119, Shaanxi, Peoples R China;

    Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Shaanxi Key Lab Adv Energy Devices,Sch Mat Sci &, Key Lab Appl Surface & Colloid Chem,Minist Educ, Xian 710119, Shaanxi, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    CsPbI2Br; DMSO adducts; inorganic perovskite solar cells; precursor; stability;

    机译:CsPbI2Br;DMSO加合物;无机钙钛矿太阳能电池;前体;稳定性;

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