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首页> 外文期刊>Advanced Functional Materials >Monomolecular and Bimolecular Recombination of Electron-Hole Pairs at the Interface of a Bilayer Organic Solar Cell
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Monomolecular and Bimolecular Recombination of Electron-Hole Pairs at the Interface of a Bilayer Organic Solar Cell

机译：双层有机太阳能电池界面上电子-空穴对的单分子和双分子复合。

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摘要

While it has been argued that field-dependent geminate pair recombination (GR) is important, this process is often disregarded when analyzing the recombination kinetics in bulk heterojunction organic solar cells (OSCs). To differentiate between the contributions of GR and nongeminate recombination (NGR) the authors study bilayer OSCs using either a PCDTBTtype polymer layer with a thickness from 14 to 66 nm or a 60 nm thick p-DTS(FBTTh2)(2) layer as donor material and C-60 as acceptor. The authors measure JV-characteristics as a function of intensity and charge-extraction-by-linearly-increasing-voltage-type hole mobilities. The experiments have been complemented by Monte Carlo simulations. The authors find that fill factor (FF) decreases with increasing donor layer thickness (L-p) even at the lowest light intensities where geminate recombination dominates. The authors interpret this in terms of thickness dependent back diffusion of holes toward their siblings at the donor-acceptor interface that are already beyond the Langevin capture sphere rather than to charge accumulation at the donor-acceptor interface. This effect is absent in the p-DTS(FBTTh2)(2) diode in which the hole mobility is by two orders of magnitude higher. At higher light intensities, NGR occurs as evidenced by the evolution of s-shape of the JV-curves and the concomitant additional decrease of the FF with increasing layer thickness.
机译：尽管有人认为依赖场的双联体重组（GR）很重要，但在分析体异质结有机太阳能电池（OSC）的重组动力学时，通常不考虑此过程。为了区分GR和非gegeminate重组（NGR）的贡献，作者研究了双层OSC，使用厚度为14至66 nm的PCDTBT型聚合物层或厚度为60 nm的p-DTS（FBTTh2）（2）层作为施主材料C-60为受体。作者通过线性增加电压型空穴迁移率来测量JV特性与强度和电荷提取的关系。实验得到了蒙特卡洛模拟的补充。这组作者发现，即使在最低的发光强度（以geminate重组为主导）下，填充因子（FF）也会随着施主层厚度（L-p）的增加而降低。作者用与厚度相关的空穴向供体-受体界面处的兄弟姐妹向后扩散的角度解释了这一点，该孔已经超出了兰格文捕获球，而不是在供体-受体界面处积累电荷。在空穴迁移率高两个数量级的p-DTS（FBTTh2）（2）二极管中没有这种效应。在较高的光强度下，NGF发生，这是由JV曲线的s形演变以及随着层厚度的增加而引起的FF的附加减小所证明的。

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  • 来源
    《Advanced Functional Materials》 |2017年第1期|1604906.1-1604906.11|共11页
  • 作者

    Hahn Tobias; Tscheuschner Steffen; Kahle Frank-Julian; Reichenberger Markus; Athanasopoulos Stavros; Saller Christina; Bazan Guillermo C.; Nguyen Thuc-Quyen; Strohriegl Peter; Bassler Heinz; Kohler Anna;

  • 作者单位

    Univ Bayreuth, Expt Phys 2, D-95440 Bayreuth, Germany;

    Univ Bayreuth, Expt Phys 2, D-95440 Bayreuth, Germany;

    Univ Bayreuth, Expt Phys 2, D-95440 Bayreuth, Germany;

    Univ Bayreuth, Expt Phys 2, D-95440 Bayreuth, Germany;

    Univ Bayreuth, Expt Phys 2, D-95440 Bayreuth, Germany|Univ Carlos III Madrid, Dept Fis, Ave Univ 30, Madrid 28911, Spain;

    Univ Bayreuth, Macromol Chem 1, D-95440 Bayreuth, Germany;

    Univ Calif Santa Barbara, Dept Chem & Biochem, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA;

    Univ Calif Santa Barbara, Dept Chem & Biochem, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA;

    Univ Bayreuth, Macromol Chem 1, D-95440 Bayreuth, Germany|Univ Bayreuth, Bayreuth Inst Macromol Sci BIMF, D-95440 Bayreuth, Germany;

    Univ Bayreuth, Bayreuth Inst Macromol Sci BIMF, D-95440 Bayreuth, Germany;

    Univ Bayreuth, Expt Phys 2, D-95440 Bayreuth, Germany|Univ Bayreuth, Bayreuth Inst Macromol Sci BIMF, D-95440 Bayreuth, Germany;

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