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Activating Basal Planes and S-Terminated Edges of MoS2 toward More Efficient Hydrogen Evolution

机译:激活MoS2的基础平面和S端接的边缘以实现更高效的氢气释放

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摘要

Molybdenum disulfide (MoS2) has been considered as a promising alternative to platinum (Pt)-based catalyst for hydrogen evolution reaction (HER) due to its low cost and high catalytic activity. However, stable 2H phase of MoS2 (2H-MoS2) exhibits low catalytic activity in HER due to the inert basal plane and S-edge. Thus, to exploit the basal plane and S-edge for additional electrocatalytic activity, a facile strategy is developed to prepare P-doped 2H-MoS2 film on conductive substrate via low-temperature heat treatment. Due to the inherent difficulty of P-doping into MoS2 crystal structure, oxygen (O)-doping is utilized to aid the P-doping process, as supported by the first-principles calculations. Interestingly, P-doping could dramatically reduce Mo valence charge, which results in the functionalization of the inert MoS2 basal plane and S-edge. In agreement with simulation results, P-doped 2H-MoS2 electrode exhibits enhanced catalytic performance in H-2 generation with low onset potential (130 mV) and small Tafel slope of 49 mV dec(-1). The enhanced catalytic performance arises from the synergistic effect of the activated basal plane, S-edge, and Mo-edge sites, leading to favorable hydrogen adsorption energies. Most importantly, improved cyclic stability is achieved, which reveals chemically inert properties of P-doped 2H-MoS2 in acidic electrolyte.
机译:由于其低成本和高催化活性,二硫化钼(MoS2)被认为是用于氢释放反应(HER)的基于铂(Pt)的催化剂的有前途的替代品。但是,由于惰性基面和S边缘,稳定的MoS2 2H相(2H-MoS2)在HER中显示出较低的催化活性。因此,为了利用基面和S边缘获得额外的电催化活性,开发了一种简便的策略,可通过低温热处理在导电衬底上制备P掺杂的2H-MoS2薄膜。由于将P掺杂到MoS2晶体结构中固有的困难,第一原理计算支持使用氧(O)掺杂来辅助P掺杂过程。有趣的是,P掺杂可以显着降低Mo价电荷,从而导致惰性MoS2基面和S-edge的功能化。与模拟结果一致,P掺杂2H-MoS2电极在H-2生成中表现出增强的催化性能,具有低起始电位(130 mV)和49 mV dec(-1)的小Tafel斜率。增强的催化性能来自活化的基面,S边缘和Mo边缘位点的协同作用,从而产生了有利的氢吸附能。最重要的是,实现了改善的循环稳定性,这揭示了酸性电解质中P掺杂2H-MoS2的化学惰性。

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  • 来源
    《Advanced Functional Materials》 |2017年第6期|1604943.1-1604943.8|共8页
  • 作者单位

    Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117576, Singapore;

    Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117576, Singapore;

    Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117576, Singapore;

    Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117576, Singapore;

    Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117576, Singapore;

    Agcy Sci Technol & Res, Inst High Performance Comp, Singapore 138632, Singapore;

    Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117576, Singapore;

    Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117576, Singapore;

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