Controlled Microfabrication of High-Aspect-Ratio Structures in Silicon at the Highest Etching Rates: The Role of H2O2 in the Anodic Dissolution of Silicon in Acidic Electrolytes

Cozzi Chiara; Polito Giovanni; Kolasinski Kurt W.; Barillaro Giuseppe

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Controlled Microfabrication of High-Aspect-Ratio Structures in Silicon at the Highest Etching Rates: The Role of H2O2 in the Anodic Dissolution of Silicon in Acidic Electrolytes

机译：最高蚀刻速率的硅中高纵横比结构的受控微细加工：H2O2在酸性电解质中硅阳极溶解中的作用

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In this work the authors report on the controlled electrochemical etching of high-aspect-ratio (from 5 to 100) structures in silicon at the highest etching rates (from 3 to 10 mu m min(-1)) at room temperature. This allows silicon micro-fabrication entering a previously unattainable region where etching of high-aspect-ratio structures (beyond 10) at high etching rate (over 3 mu m min(-1)) was prohibited for both commercial and research technologies. Addition of an oxidant, namely H2O2, to a standard aqueous hydrofluoric (HF) acid electrolyte is used to dramatically change the stoichiometry of the silicon dissolution process under anodic biasing without loss of etching control accuracy at the higher depths (up to 200 mu m). The authors show that the presence of H2O2 reduces the valence of the dissolution process to 1, thus rendering the electrochemical etching more effective, and catalyzes the etching rate by opening a more efficient path for silicon dissolution with respect to the well-known Gerischer mechanism, thus increasing the etching speed at both shorter and higher depths.

机译：在这项工作中，作者报告了在室温下以最高蚀刻速率（从3到10μmmin（-1））在硅中对高纵横比（从5到100）结构进行的受控电化学蚀刻。这允许硅微加工进入以前无法实现的区域，在该区域中，无论是商业技术还是研究技术，都禁止以高蚀刻速率（超过3μmmin（-1））蚀刻高纵横比结构（超过10）。在标准的氢氟酸水溶液中添加氧化剂（即H2O2）可在阳极偏压下显着改变硅溶解过程的化学计量，而不会影响较高深度（最大200μm）的蚀刻控制精度。作者表明，H2O2的存在将溶解过程的化合价降低到1，从而使电化学蚀刻更有效，并且通过相对于众所周知的Gerischer机理开辟一条更有效的硅溶解途径来催化蚀刻速率，因此，在较短深度和较高深度处都增加了蚀刻速度。

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《Advanced Functional Materials》 |2017年第6期|1604310.1-1604310.9|共9页
作者
Cozzi Chiara; Polito Giovanni; Kolasinski Kurt W.; Barillaro Giuseppe;
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Univ Pisa, Dipartimento Ingn Informaz, Via G Caruso 16, I-56122 Pisa, Italy;

Univ Pisa, Dipartimento Ingn Informaz, Via G Caruso 16, I-56122 Pisa, Italy;

West Chester Univ, Dept Chem, W Chester, PA 19383 USA;

Univ Pisa, Dipartimento Ingn Informaz, Via G Caruso 16, I-56122 Pisa, Italy;

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1. Single-mask, three-dimensional microfabrication of high-aspect-ratio structures in bulk silicon using reactive ion etching lag and sacrificial oxidation [J] . M. P. Rao, M. F. Aimi, N. C. MacDonald Applied Physics Letters . 2004,第25期

机译：使用反应离子刻蚀滞后和牺牲氧化技术在体硅中高纵横比结构的单掩模三维微加工
2. Boundary Processes in the Electrolyte-Silicon Interface Area during the Self-Organization of the Mosaic Structure of 3D Islets of Porous Silicon Nanocrystallites in the Long-Term Anode Etching of p-Si (100) in Electrolyte with an Internal Current Source [J] . K. B. Tynyshtykbaev, Yu. A. Ryabikin, S. Zh. Tokmoldin, Russian Microelectronics . 2015,第8期

机译：在内部电流源的电解质中p-Si（100）的长期阳极蚀刻中，多孔硅纳米微晶的3D岛的镶嵌结构的自组织过程中，电解质-硅界面区域中的边界过程
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4. Controlled Fabrication of High-Aspect-Ratio Microstructures in Silicon at Etching Rates Beyond State-of-the-Art Microstructuring Technologies [C] . C. Cozzi, G. Polito, K. W. Kolasinski, Meeting of the Electrochemical Society . 2017

机译：在蚀刻速率下控制硅中高纵横比微结构的制造超出最先进的微结构技术
5. Cellular response of one-dimensional silicon nanowires and the effect of etching silicon (111) substrates with hydrofluoric acid prior to nanowire growth. [D] . Tanaudommongkon, Asama. 2009

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6. Engineering Silicon to Porous Silicon and SiliconNanowires by Metal-Assisted Chemical Etching: Role of Ag Size andElectron-Scavenging Rate on Morphology Control and Mechanism [O] . Kanakaraj Rajkumar, Ramanathaswamy Pandian, Amirthapandian Sankarakumar, 2017

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机译：电解质在电解质中的长期阳极蚀刻在电解质中的长期阳极蚀刻的三维岛的三维岛的三维岛硅纳米晶体的自组织中的边界过程

Controlled Microfabrication of High-Aspect-Ratio Structures in Silicon at the Highest Etching Rates: The Role of H2O2 in the Anodic Dissolution of Silicon in Acidic Electrolytes

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