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首页> 外文期刊>Advanced Functional Materials >Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
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Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

机译：多层六方氮化硼中晶界辅助双极和阈值电阻转换的共存

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摘要

The use of 2D materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while the research in 2D metallic and semiconducting materials is well established, detailed knowledge and applications of 2D insulators are still scarce. In this paper, the presence of resistive switching (RS) in multilayer hexagonal boron nitride (h-BN) is studied using different electrode materials, and a family of h-BN-based resistive random access memories with tunable capabilities is engineered. The devices show the coexistence of forming free bipolar and threshold-type RS with low operation voltages down to 0.4 V, high current on/off ratio up to 10(6), and long retention times above 10 h, as well as low variability. The RS is driven by the grain boundaries (GBs) in the polycrystalline h-BN stack, which allow the penetration of metallic ions from adjacent electrodes. This reaction can be boosted by the generation of B vacancies, which are more abundant at the GBs. To the best of our knowledge, h-BN is the first 2D material showing the coexistence of bipolar and threshold RS, which may open the door to additional functionalities and applications.
机译：使用2D材料来改善电子设备的功能是一种很有前途的策略，最近在学术界和工业界都引起了极大的兴趣。然而，尽管对2D金属和半导体材料的研究已经建立，但2D绝缘子的详细知识和应用仍很匮乏。在本文中，使用不同的电极材料研究了多层六方氮化硼（h-BN）中电阻开关（RS）的存在，并设计了具有可调功能的基于h-BN的电阻随机存取存储器系列。该器件显示了共存的自由双极型和阈值型RS的共存性，其低至0.4V的低工作电压，高达10（6）的高电流开/关比，超过10小时的长保留时间以及低可变性。 RS由多晶h-BN堆叠中的晶界（GB）驱动，这允许金属离子从相邻电极渗透。 B空位的产生可以促进该反应，B空位在GB处更为丰富。据我们所知，h-BN是第一种显示双极性和阈值RS共存的2D材料，这可能会为其他功能和应用打开大门。

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  • 来源
    《Advanced Functional Materials》 |2017年第10期|1604811.1-1604811.10|共10页
  • 作者

    Pan Chengbin; Ji Yanfeng; Xiao Na; Hui Fei; Tang Kechao; Guo Yuzheng; Xie Xiaoming; Puglisi Francesco M.; Larcher Luca; Miranda Enrique; Jiang Lanlan; Shi Yuanyuan; Valov Ilia; McIntyre Paul C.; Waser Rainer; Lanza Mario;

  • 作者单位

    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Collaborat Innovat Ctr Suzhou Nanosci & Technol, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;

    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Collaborat Innovat Ctr Suzhou Nanosci & Technol, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;

    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Collaborat Innovat Ctr Suzhou Nanosci & Technol, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;

    Harvard Univ, Rowland Inst, Cambridge, MA 02142 USA;

    Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China;

    Univ Modena & Reggio Emilia, DISMI, I-42122 Reggio Emilia, Italy;

    Univ Modena & Reggio Emilia, DISMI, I-42122 Reggio Emilia, Italy;

    Univ Autonoma Barcelona, Dept Elect Engn, Cerdanyola Del Valles 08193, Spain;

    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Collaborat Innovat Ctr Suzhou Nanosci & Technol, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;

    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Collaborat Innovat Ctr Suzhou Nanosci & Technol, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;

    Forschungszentrum Julich, D-52425 Julich, Germany;

    Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;

    Forschungszentrum Julich, D-52425 Julich, Germany;

    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Collaborat Innovat Ctr Suzhou Nanosci & Technol, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    bipolarity; hexagonal boron nitride; resistive switching; RRAM;

    机译：双极性六方氮化硼电阻开关RRAM;

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