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首页> 外文期刊>Advanced Functional Materials >One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices
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One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices

机译：非易失性ReRAM器件中的一步式基于全溶液的Au-GO核壳纳米球活性层

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摘要

Nonvolatile resistive random-access memory devices based on graphene-oxide-wrapped gold nanospheres (AuNS@GO) are fabricated following a one-step room-temperature solution-process approach reported herein for the first time. The effect of the thickness of the GO layer (2, 5, and 7 nm) and the size of the synthesized AuNS (15 and 55 nm) are inspected. Reliable bistable switching is observed in the devices made from a flexible substrate and incorporating 5 and 7 nm thick GO-wrapped AuNS, sandwiched between two metal electrodes. Current-voltage measurements show bipolar switching behavior with an ON/OFF ratio of 10(3) and relatively low operating voltage (-2.5 V). The aforementioned devices unveil remarkable robustness over 100 endurance cycles and a retention of 10(3) s. Conversely, a 2 nm thick GO layer is shown to be insufficient to allow current passage from the bottom to the top electrodes. The resistive switching mechanism is demonstrated by space charge trapped limited current due to the AuNS in AuNS@GO matrix. The proposed device and methodology herein applied are expected to be attractive candidates for future generation flexible memory devices.
机译：遵循本文首次报道的单步室温溶液处理方法，制造了基于氧化石墨烯包裹的金纳米球（AuNS @ GO）的非易失性电阻式随机存取存储设备。检查GO层的厚度（2、5和7nm）和合成的AuNS的尺寸（15和55nm）的影响。在由柔性基板制成的设备中观察到可靠的双稳态开关，该设备包含夹在两个金属电极之间的5纳米和7纳米厚的GO包裹的AuNS。电流电压测量显示出双极性开关行为，其开/关比为10（3），并且工作电压相对较低（-2.5 V）。前述器件在100个耐久循环中展现出了卓越的耐用性，并保留了10（3）s。相反，显示2 nm厚的GO层不足以允许电流从底部电极到达顶部电极。电阻开关机制由AuNS @ GO矩阵中的AuNS引起的空间电荷俘获的受限电流证明。预期本文中所应用的所提出的设备和方法学将是下一代柔性存储设备的有吸引力的候选者。

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  • 来源
    《Advanced Functional Materials》 |2017年第10期|1604604.1-1604604.5|共5页
  • 作者

    Rani Adila; Velusamy Dhinesh Babu; Mota Filipe Marques; Jang Yoon Hee; Kim Richard Hahnkee; Park Cheolmin; Kim Dong Ha;

  • 作者单位

    Ewha Womans Univ, Dept Chem & Nano Sci, Div Mol & Life Sci, Coll Nat Sci, 52 Ewhayeodae Gil, Seoul 03760, South Korea;

    Yonsei Univ, Dept Mat Sci & Engn, 50 Yonsei Ro, Seoul 03722, South Korea;

    Ewha Womans Univ, Dept Chem & Nano Sci, Div Mol & Life Sci, Coll Nat Sci, 52 Ewhayeodae Gil, Seoul 03760, South Korea;

    Ewha Womans Univ, Dept Chem & Nano Sci, Div Mol & Life Sci, Coll Nat Sci, 52 Ewhayeodae Gil, Seoul 03760, South Korea|Korea Inst Sci & Technol, Photo Elect Hybrids Res Ctr, Hwarangno 14 Gil 5, Seoul 02792, South Korea;

    Yonsei Univ, Dept Mat Sci & Engn, 50 Yonsei Ro, Seoul 03722, South Korea;

    Yonsei Univ, Dept Mat Sci & Engn, 50 Yonsei Ro, Seoul 03722, South Korea;

    Ewha Womans Univ, Dept Chem & Nano Sci, Div Mol & Life Sci, Coll Nat Sci, 52 Ewhayeodae Gil, Seoul 03760, South Korea|Ewha Womans Univ, Div Chem Engn & Mat Sci, Coll Engn, 52 Ewhayeodae Gil, Seoul 03760, South Korea;

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  • 正文语种 eng
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  • 关键词

    active layer; Au nanoparticle@graphene oxide; core-shell nanoparticles; nonvolatile memory; resistive random access memory;

    机译：活性层;金纳米粒子@氧化石墨烯;核壳纳米粒子;非易失性存储器;电阻式随机存取存储器;

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