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首页> 外文期刊>Advanced Functional Materials >Rapid Pseudocapacitive Sodium-Ion Response Induced by 2D Ultrathin Tin Monoxide Nanoarrays
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Rapid Pseudocapacitive Sodium-Ion Response Induced by 2D Ultrathin Tin Monoxide Nanoarrays

机译：二维超薄一氧化锡纳米阵列诱导的快速伪电容性钠离子响应。

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摘要

Nanostructured tin-based anodes are promising for both lithium and sodium ion batteries (LIBs and SIBs), but their performances are limited by the rate capability and long-term cycling stability. Here, ultrathin SnO nanoflakes arrays are in situ grown on highly conductive graphene foam/carbon nanotubes substrate, forming a unique, flexible, and binder-free 3D hybrid structure electrode. This electrode exhibits an excellent Na+ storage capacity of 580 mAh g(-1) at 0.1 A g(-1), and to the best of our knowledge, has the longest-reported high-rate cycling (1000 cycles at 1 A g(-1)) among tin-based SIB anodes. Compared with its LIB performance, the enhanced pseudocapacitive contribution in SIB is proved to be the origin of fast kinetics and long durability of the electrode. Moreover, Raman peaks from the full sodiation product Na15Sn4 at 75 and 105 cm(-1) are successfully detected and also proved by density functional theory calculations, which could be a promising clue for structure evolution analysis of other tin-based electrodes.
机译：纳米结构的锡基阳极有望用于锂和钠离子电池（LIB和SIB），但其性能受到速率能力和长期循环稳定性的限制。在这里，超薄SnO纳米薄片阵列在高导电石墨烯泡沫/碳纳米管基板上原位生长，形成了独特，灵活且无粘合剂的3D混合结构电极。该电极在0.1 A g（-1）时具有580 mAh g（-1）的极好的Na +储存容量，据我们所知，它具有最长的高速率循环报告（在1 A g（1000 -1））在锡基SIB阳极中。与LIB性能相比，SIB中增强的伪电容作用被证明是电极快速动力学和长寿命的起源。此外，成功地从全固态产物Na15Sn4的拉曼峰在75和105 cm（-1）处进行了检测，并通过密度泛函理论计算得到了证明，这可能为其他锡基电极的结构演化分析提供了有希望的线索。

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  • 来源
    《Advanced Functional Materials》 |2017年第12期|1606232.1-1606232.8|共8页
  • 作者

    Chen Minghua; Chao Dongliang; Liu Jilei; Yan Jiaxu; Zhang Bowei; Huang Yizhong; Lin Jianyi; Shen Ze Xiang;

  • 作者单位

    Harbin Univ Sci & Technol, Minist Educ, Key Lab Engn Dielectr & Applicat, Harbin 150080, Peoples R China|Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore;

    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore;

    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore;

    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore;

    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore|Nanyang Technol Univ, Energy Res Inst NTU ERI N, Singapore 637553, Singapore;

    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore|Nanyang Technol Univ, Energy Res Inst NTU ERI N, Singapore 637553, Singapore;

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