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Concurrent Synthesis of High-Performance Monolayer Transition Metal Disulfides

机译：高性能单层过渡金属二硫化物的同时合成

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摘要

To date, the chemical vapor deposition (CVD) approach has been widely used for the growth of transition metal dichalcogenides (TMDs). However, the reported CVD methods to synthesize TMDs cannot be used to grow more than one type of TMDs. This work reports a promising CVD technique to concurrently synthesize multiple monolayer transition metal disulfides once. The optoelectrical characterization and high-resolution transmission electron microscopy show the high quality of monolayer crystals, and, more importantly, there is no mixing between different precursors during the growth process, which has been investigated by considering the gas flow dynamics and concentration distribution of precursors in our setup. This strategy indicates the promising future for the batch production of 2D materials and the concurrent synthesis techniques in standard state-of-the-art complementary metal-oxide-semiconductor (CMOS) fabrication technology.
机译：迄今为止，化学气相沉积（CVD）方法已被广泛用于过渡金属二卤化碳（TMDs）的生长。但是，已报道的用于合成TMD的CVD方法不能用于生长一种以上的TMD。这项工作报告了一种有前途的CVD技术，可以同时一次合成多个单层过渡金属二硫化物。光电特性和高分辨率透射电子显微镜显示出高质量的单层晶体，更重要的是，在生长过程中不同前驱物之间没有混合，这已通过考虑气体流动动力学和前驱物浓度分布进行了研究。在我们的设置中。该策略表明了2D材料的批量生产以及标准的最新互补金属氧化物半导体（CMOS）制造技术中同时进行的合成技术的广阔前景。

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  • 来源
    《Advanced Functional Materials》 |2017年第15期|1605896.1-1605896.8|共8页
  • 作者

    Sun Linfeng; Leong Wei Sun; Yang Shize; Chisholm Matthew F.; Liang Shi-Jun; Ang Lay Kee; Tang Yongjian; Mao Yunwei; Kong Jing; Yang Hui Ying;

  • 作者单位

    Singapore Univ Technol & Design, Pillar Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore;

    Singapore Univ Technol & Design, Pillar Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore|MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA;

    Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA;

    Singapore Univ Technol & Design, Pillar Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore;

    Singapore Univ Technol & Design, Pillar Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore;

    Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    Singapore Univ Technol & Design, Pillar Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore;

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