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Ultrathin MnO2/Graphene Oxide/Carbon Nanotube Interlayer as Efficient Polysulfide-Trapping Shield for High-Performance Li-S Batteries

机译:超薄MnO2 /氧化石墨烯/碳纳米管中间层可作为高性能Li-S电池的高效聚硫捕获阱

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摘要

Ultrathin MnO2/graphene oxide/carbon nanotube (G/M@CNT) interlayers are developed as efficient polysulfide-trapping shields for high-performance Li-S batteries. A simple layer-by-layer procedure is used to construct a sandwiched vein-membrane interlayer of thickness 2 mu m and areal density 0.104 mg cm(-2) by loading MnO2 nanoparticles and graphene oxide (GO) sheets on superaligned carbon nanotube films. The G/M@CNT interlayer provides a physical shield against both polysulfide shuttling and chemical adsorption of polysulfides by MnO2 nanoparticles and GO sheets. The synergetic effect of the G/M@CNT interlayer enables the production of Li-S cells with high sulfur loadings (60-80 wt%), a low capacity decay rate (-0.029% per cycle over 2500 cycles at 1 C), high rate performance (747 mA h g(-1) at a charge rate of 10 C), and a low self-discharge rate with high capacity retention (93.0% after 20 d rest). Electrochemical impedance spectroscopy, cyclic voltammetry, and scanning electron microscopy observations of the Li anodes after cycling confirm the polysulfide-trapping ability of the G/M@CNT interlayer and show its potential in developing high-performance Li-S batteries.
机译:开发了超薄MnO2 /氧化石墨烯/碳纳米管(G / M @ CNT)中间层,作为高性能Li-S电池的高效聚硫化物捕获屏蔽层。通过将MnO2纳米颗粒和氧化石墨烯(GO)片加载到超取向碳纳米管薄膜上,使用一种简单的逐层过程来构建厚度为2μm和面密度为0.104 mg cm(-2)的夹心式静脉膜中间层。 G / M @ CNT中间层为MnS2纳米颗粒和GO片材提供了多硫化物穿梭和多硫化物化学吸附的物理屏蔽。 G / M @ CNT中间层的协同作用使Li-S电池的生产具有高硫负载(60-80 wt%),低容量衰减率(在1 C下2500个循环中每个循环的-0.029%),高倍率性能(在10 C的充电速率下为747 mA hg(-1))和低的自放电速率以及高的容量保持能力(静置20天后为93.0%)。循环后对Li阳极的电化学阻抗谱,循环伏安法和扫描电子显微镜观察证实了G / M @ CNT中间层的多硫化物捕获能力,并显示了其在开发高性能Li-S电池方面的潜力。

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  • 来源
    《Advanced Functional Materials》 |2017年第18期|1606663.1-1606663.11|共11页
  • 作者单位

    Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China|Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China;

    Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China|Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China;

    Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China|Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China;

    Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China|Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China;

    Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China|Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China|Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China;

    Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China|Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China|Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China;

    Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China|Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China;

    Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China|Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China|Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China;

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