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首页> 外文期刊>Advanced Functional Materials >Controlled Synthesis of Ultrathin 2D beta-In2S3 with Broadband Photoresponse by Chemical Vapor Deposition
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Controlled Synthesis of Ultrathin 2D beta-In2S3 with Broadband Photoresponse by Chemical Vapor Deposition

机译：化学气相沉积控制宽带光响应合成超薄二维β-In2S3

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摘要

beta-In2S3 is a natural defective III-VI semiconductor attracting considerable interests but lack of efficient method for its 2D form fabrication. Here, for the first time, this paper reports controlled synthesis of ultrathin 2D beta-In2S3 flakes via a facile space-confined chemical vapor deposition method. The natural defects in beta-In2S3 crystals, clearly revealed by optical spectra and optoelectronic measurement, strongly modulate the (opto)-electronic of as-fabricated beta-In2S3 and render it a broad detection range from visible to near-infrared. Particularly, the as-fabricated beta-In2S3 photodetector shows a high photoresponsivity of 137 A W-1, a high external quantum efficiency of 3.78 x 10(4)%, and a detectivity of 4.74 x 10(10) Jones, accompanied with a fast rise and decay time of 6 and 8 ms, respectively. In addition, an interesting linear response to the testing power intensities range is observed, which can also be understood by the presence of natural defects. The unique defective structure and intrinsic optical properties of beta-In2S3, together with its controllable growth, endow it with great potential for future applications in electronics and optoelectronics.
机译：beta-In2S3是天然缺陷的III-VI半导体，吸引了相当大的兴趣，但缺乏有效的2D形式制造方法。在这里，本文首次报道了通过一种简便的空间受限化学气相沉积方法可控地合成超薄2Dβ-In2S3薄片。 β-In2S3晶体中的自然缺陷可以通过光谱和光电测量清楚地显示出来，它们强烈地调制着所制造的β-In2S3的（光电）电子，使其检测范围从可见光到近红外。特别是，所制造的β-In2S3光电探测器显示出137 A W-1的高光响应性，3.78 x 10（4）％的高外部量子效率和4.74 x 10（10）Jones的检测性，并伴随着快速上升和下降时间分别为6和8 ms。另外，观察到对测试功率强度范围的有趣线性响应，这也可以通过存在自然缺陷来理解。 β-In2S3独特的缺陷结构和固有的光学特性，以及可控的增长，使其在电子和光电子领域的未来应用具有巨大潜力。

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  • 来源
    《Advanced Functional Materials》 |2017年第36期|1702448.1-1702448.9|共9页
  • 作者

    Huang Wenjuan; Gan Lin; Yang Haotian; Zhou Nan; Wang Renyan; Wu Wanhui; Li Huiqiao; Ma Ying; Zeng Haibo; Zhai Tianyou;

  • 作者单位

    Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China;

    Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China;

    Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China;

    Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China;

    Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China;

    Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China;

    Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China;

    Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China;

    Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Coll Mat Sci & Engn, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Jiangsu, Peoples R China;

    Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    2D; broadband; chemical vapor deposition; In2S3; photoresponse;

    机译：二维;宽带;化学气相沉积;In2S3;光响应;

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