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首页> 外文期刊>Advanced Functional Materials >High-Efficiency and Stable Quantum Dot Light-Emitting Diodes Enabled by a Solution-Processed Metal-Doped Nickel Oxide Hole Injection Interfacial Layer
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High-Efficiency and Stable Quantum Dot Light-Emitting Diodes Enabled by a Solution-Processed Metal-Doped Nickel Oxide Hole Injection Interfacial Layer

机译：溶液处理的金属掺杂氧化镍空穴注入界面层可实现高效且稳定的量子点发光二极管

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摘要

Stabilization is one critical issue that needs to be improved for future application of colloidal quantum dot (QD)-based light-emitting diodes (QLEDs). This study reports highly efficient and stable QLEDs based on solution-processsed, metal-doped nickel oxide films as hole injection layer (HIL). Several kinds of metal dopants (Li, Mg, and Cu) are introduced to improve the hole injection capability of NiO films. The resulting device with Cu:NiO HIL exhibits superior performance compared to the state-of-the-art poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS)-based QLEDs, with a maximum current efficiency and external quantum efficiency of 45.7 cd A(-1) and 10.5%, respectively. These are the highest values reported so far for QLEDs with PEDOT:PSS-free normal structure. Meanwhile, the resulting QLED shows a half-life time of 87 h at an initial luminance of 5000 cd m(-2), almost fourfold longer than that of the PEDOT:PSS-based device.
机译：稳定性是一个关键问题，对于基于胶体量子点（QD）的发光二极管（QLED）的未来应用，需要对其进行改进。这项研究报告了基于固溶处理的金属掺杂的氧化镍薄膜作为空穴注入层（HIL）的高效且稳定的QLED。为了提高NiO薄膜的空穴注入能力，引入了几种金属掺杂剂（Li，Mg和Cu）。与最新的基于聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）的QLED相比，具有Cu：NiO HIL的最终器件表现出卓越的性能，并具有最大的电流效率和外部量子效率分别为45.7 cd A（-1）和10.5％。这些是迄今为止报道的无PEDOT：PSS正常结构的QLED的最高值。同时，所得的QLED在5000 cd m（-2）的初始亮度下显示了87 h的半衰期，几乎是基于PEDOT：PSS的器件的四倍。

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  • 来源
    《Advanced Functional Materials》 |2017年第42期|1704278.1-1704278.7|共7页
  • 作者

    Cao Fan; Wang Haoran; Shen Piaoyang; Li Xiaomin; Zheng Yanqiong; Shang Yuequn; Zhang Jianhua; Ning Zhijun; Yang Xuyong;

  • 作者单位

    Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China;

    Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China;

    Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China;

    Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China;

    Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China;

    ShanghaiTech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China;

    Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China;

    ShanghaiTech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China;

    Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    electroluminescence; metal doping; nickel oxide; quantum dot LEDs;

    机译：电致发光;金属掺杂;氧化镍;量子点LED;

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