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首页> 外文期刊>Advanced Functional Materials >Understanding Polymorph Transformations in Core-Chlorinated Naphthalene Diimides and their Impact on Thin-Film Transistor Performance
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Understanding Polymorph Transformations in Core-Chlorinated Naphthalene Diimides and their Impact on Thin-Film Transistor Performance

机译：了解核心氯化萘二酰亚胺中的多晶型转变及其对薄膜晶体管性能的影响

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摘要

Though charge transport is sensitive to subtle changes in the packing motifs of molecular semiconductors, research addressing how intermolecular packing influences electrical properties has largely been carried out on single-crystals, as opposed to the more technologically relevant thin-film transistors (TFTs). Here, independent and reversible access to the monoclinic and triclinic crystal structures of a core-chlorinated naphthalene tetracarboxylic diimide (NTCDI-1) is demonstrated in polycrystalline thin films via post-deposition annealing. Time-resolved measurements of these transitions via UV-visible spectroscopy and grazing-incidence X-ray diffraction indicate that the polymorphic transformations follow second-order Avrami kinetics, suggestive of 2D growth after initial nucleation. Thin-film transistors comprising triclinic NTCDI-1 consistently outperform those comprising its monoclinic counterpart. This behavior contrasts that of single-crystal transistors in which devices comprising monoclinic crystals are consistently superior to devices with triclinic crystals. This difference is attributed to more uniform in-plane charge transport in polycrystalline thin films having the triclinic compared to the monoclinic polymorph. As the mobility of TFTs is a reflection of ensemble-average charge transport across crystalline grains having different molecular orientations, this study suggests that among different polymorphs of a particular molecular semiconductor, those with smaller in-plane anisotropy are more beneficial for efficient lateral charge transport in polycrystalline devices.
机译：尽管电荷传输对分子半导体的堆积图案中的细微变化敏感，但是与分子间堆积如何影响电学性质有关的研究主要是在单晶上进行的，这与技术上更相关的薄膜晶体管（TFT）相反。在这里，通过沉积后退火在多晶薄膜中证明了可独立且可逆地访问多氯化薄膜中的核心氯化萘四甲酸二亚胺（NTCDI-1）的单斜晶和三斜晶的晶体结构。通过紫外可见光谱和掠入射X射线衍射对这些跃迁的时间分辨测量表明，多晶型转变遵循二阶Avrami动力学，暗示了初始成核后的2D生长。包含三斜晶NTCDI-1的薄膜晶体管始终优于包含其单斜晶晶体管的薄膜晶体管。这种行为与单晶晶体管相反，在单晶晶体管中，包含单斜晶体的器件始终优于具有三斜晶体的器件。与单斜晶多晶型物相比，该差异归因于具有三斜晶系的多晶薄膜中更均匀的面内电荷传输。由于TFT的迁移率反映了跨分子取向不同的晶粒的整体平均电荷传输，这项研究表明，在特定分子半导体的不同多晶型物中，面内各向异性较小的那些对于有效的横向电荷传输更有利。在多晶器件中。

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  • 来源
    《Advanced Functional Materials》 |2016年第14期|2357-2364|共8页
  • 作者

    Purdum Geoffrey E.; Yao Nan; Woll Arthur; Gessner Thomas; Weitz Ralf Thomas; Loo Yueh-Lin;

  • 作者单位

    Princeton Univ, Dept Chem & Biol Engn, Princeton, NJ 08544 USA;

    Princeton Univ, Princeton Inst Sci & Technol Mat, Princeton, NJ 08544 USA;

    Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA;

    BASF SE, GMO-O,A30, D-67056 Ludwigshafen, Germany;

    BASF SE, GMO-F-J542S, D-67056 Ludwigshafen, Germany;

    Princeton Univ, Dept Chem & Biol Engn, Princeton, NJ 08544 USA;

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