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首页> 外文期刊>Advanced Functional Materials >Contact-Induced Nucleation in High-Performance Bottom-Contact Organic Thin Film Transistors Manufactured by Large-Area Compatible Solution Processing
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Contact-Induced Nucleation in High-Performance Bottom-Contact Organic Thin Film Transistors Manufactured by Large-Area Compatible Solution Processing

机译：通过大面积兼容溶液加工制造的高性能底部接触有机薄膜晶体管中的接触诱导形核

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摘要

Scalable manufacturing of small-molecule organic thin film transistors (OTFTs) with performance approaching single crystals requires extraordinary control over microstructures and morphologies of organic semiconductors (OSCs). Here, contact-induced nucleation in the context of small-molecule OSCs and OSC: polymer blends prepared by blade coating, a printing process capable of mimicking large area batch and roll-to-roll manufacturing, is investigated. Using polarized optical microscopy, microbeam grazing incidence wide angle X-ray scattering, and energy-filtered transmission electron microscopy, it is revealed that previous design rules drawn from spin coating of OSCs and contact-induced nucleation may have to be revisited in the context of blade coating. It is shown that blade coating achieves texture purity in case of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT), irrespective of whether the contact is chemically treated with a halogenated self-assembled monolayer (SAM) or not, in contrast to spin coating which requires an SAM. Here, it is demonstrated that OSC-contact interactions increase the nucleation density and can disrupt the vertical stratification in polymer: OSC blends with great detrimental effects on carrier transport. Using these lessons, we demonstrate bottom-contact bottom-gate OTFTs without chemical surface modification achieving hole mobilities of 4.6 and 3.6 cm 2 V-(1) s(-1), using 6,13-bis(triisopropylsilylethynyl)pentacene and diF-TES-ADT, respectively, blended with an insulating polymer.
机译：性能接近单晶的小分子有机薄膜晶体管（OTFT）的可扩展制造要求对有机半导体（OSC）的微观结构和形态进行出色的控制。在此，研究了在小分子OSC和OSC背景下的接触诱导成核：通过刮涂法制备的聚合物共混物，该印刷方法能够模仿大面积批量生产和卷对卷制造。使用偏光光学显微镜，微束掠射入射广角X射线散射和能量过滤透射电子显微镜，发现在OSC的旋涂和接触诱导形核中得出的先前设计规则可能必须重新考虑。刀片涂层。结果表明，在2,8-二氟-5,11-双（三乙基甲硅烷基乙炔基）蒽噻吩（diF-TES-ADT）的情况下，无论接触层是否经过卤化自组装单层化学处理，叶片涂层均可以达到纹理纯度。 （SAM）与否，与需要SAM的旋涂相反。在此，证明了OSC-接触相互作用增加了成核密度，并且可以破坏聚合物中的垂直分层：OSC共混物对载流子传输具有很大的不利影响。使用这些课程，我们演示了使用6,13-​​双（三异丙基甲硅烷基乙炔基）并五苯和diF-进行无化学表面改性的底接触底栅OTFT，实现了4.6和3.6 cm 2 V-（1）s（-1）的空穴迁移率。 TES-ADT分别与绝缘聚合物混合。

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  • 来源
    《Advanced Functional Materials》 |2016年第14期|2371-2378|共8页
  • 作者

    Niazi Muhammad R.; Li Ruipeng; Abdelsamie Maged; Zhao Kui; Anjum Dalaver H.; Payne Marcia M.; Anthony John; Smilgies Detlef-M.; Amassian Aram;

  • 作者单位

    King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia;

    King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia|Cornell Univ, CHESS, Ithaca, NY 14853 USA;

    King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia;

    King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia;

    King Abdullah Univ Sci & Technol, Adv Imaging & Characterizat Lab, Thuwal 239556900, Saudi Arabia;

    Univ Kentucky, Dept Chem, Lexington, KY 40506 USA;

    Univ Kentucky, Dept Chem, Lexington, KY 40506 USA;

    Cornell Univ, CHESS, Ithaca, NY 14853 USA;

    King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia;

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