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Tribotronic Phototransistor for Enhanced Photodetection and Hybrid Energy Harvesting

机译：摩擦式光电晶体管，用于增强光电检测和混合能量收集

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摘要

Tribotronics is a new field developed by coupling triboelectricity and semiconductor, which can drive triboelectric-charge-controlled optoelectronic devices by further introducing optoelectronics. In this paper, a tribotronic phototransistor (TPT) is proposed by coupling a field-effect phototransistor and a triboelectric nanogenerator (TENG), in which the contact-induced inner gate voltage by the mobile frictional layer is used for modulating the photodetection characteristics of the TPT. Based on the TPT, alternatively, a coupled energy-harvester (CEH) is fabricated for simultaneously scavenging solar and wind energies, in which the output voltage on the external resistance from the wind driven TENG is used as the gate voltage of the TPT for enhancing the solar energy conversion. As the wind speed increases, the photovoltaic characteristics of the CEH including the short-circuit current, open-circuit voltage, and maximal output power have been greatly enhanced. This work has greatly expanded the functionality of tribotronics in photodetection and energy harvesting, and provided a potential solution for highly efficient harvesting and utilizing multitype energy.
机译：摩擦电子学是通过将摩擦电与半导体耦合而发展起来的一个新领域，可以通过进一步引入光电技术来驱动摩擦电荷控制的光电器件。本文提出了一种通过将场效应光电晶体管和摩擦电纳米发电机（TENG）耦合而形成的摩擦电子光电晶体管（TPT），其中利用移动摩擦层的接触感应内栅电压来调制该晶体管的光电检测特性。 TPT。替代地，基于TPT，制造用于同时清除太阳能和风能的耦合能量收集器（CEH），其中将来自风力驱动的TENG的外部电阻上的输出电压用作TPT的栅极电压以增强太阳能转换。随着风速的增加，CEH的光伏特性（包括短路电流，开路电压和最大输出功率）得到了极大的提高。这项工作大大扩展了摩擦电子学在光电检测和能量收集中的功能，并为高效收集和利用多种类型的能量提供了潜在的解决方案。

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  • 来源
    《Advanced Functional Materials》 |2016年第15期|2554-2560|共7页
  • 作者

    Zhang Chi; Zhang Zhao Hua; Yang Xiang; Zhou Tao; Han Chang Bao; Wang Zhong Lin;

  • 作者单位

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China|Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;

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