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首页> 外文期刊>Advanced Functional Materials >Photovoltaic and Amplified Spontaneous Emission Studies of High-Quality Formamidinium Lead Bromide Perovskite Films
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Photovoltaic and Amplified Spontaneous Emission Studies of High-Quality Formamidinium Lead Bromide Perovskite Films

机译：高质量甲Form溴化铅钙钛矿薄膜的光伏和自发发射研究

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摘要

This study demonstrates the formation of extremely smooth and uniform formamidinium lead bromide (CH(NH2)(2)PbBr3 = FAPbBr(3)) films using an optimum mixture of dimethyl sulfoxide and N,N-dimethylformamide solvents. Surface morphology and phase purity of the FAPbBr(3) films are thoroughly examined by field emission scanning electron microscopy and powder X-ray diffraction, respectively. To unravel the photophysical properties of these films, systematic investigation based on time-integrated and time-dependent photoluminescence studies are carried out which, respectively, bring out relatively lower nonradiative recombination rates and long lasting photogenerated charge carriers in FAPbBr(3) perovskite films. The devices based on FTO/TiO2/FAPbBr(3)/spiro-OMeTAD/Au show highly reproducible open-circuit voltage (V-oc) of 1.42 V, a record for FAPbBr(3)-based perovskite solar cells. V-oc as a function of illumination intensity indicates that the contacts are very selective and higher V-oc values are expected to be achieved when the quality of the FAPbBr(3) film is further improved. Overall, the devices based on these films reveal appreciable power conversion efficiency of 7% under standard illumination conditions with negligible hysteresis. Finally, the amplified spontaneous emission (ASE) behavior explored in a cavity-free configuration for FAPbBr(3) perovskite films shows a sharp ASE threshold at a fluence of 190 mu J cm(-2) with high quantum efficiency further confirming the high quality of the films.
机译：这项研究表明，使用二甲亚砜和N，N-二甲基甲酰胺溶剂的最佳混合物，可以形成极其光滑且均匀的甲ami溴化铅（CH（NH2）（2）PbBr3 = FAPbBr（3））膜。 FAPbBr（3）膜的表面形态和相纯度分别通过场发射扫描电子显微镜和粉末X射线衍射进行了彻底检查。为了揭示这些薄膜的光物理特性，进行了基于时间积分和时间依赖性光致发光研究的系统研究，分别在FAPbBr（3）钙钛矿薄膜中产生了相对较低的非辐射复合率和持久的光生电荷载体。基于FTO / TiO2 / FAPbBr（3）/ spiro-OMeTAD / Au的器件显示出1.42 V的高可再现开路电压（V-oc），这是基于FAPbBr（3）的钙钛矿太阳能电池的记录。 V-oc与照明强度的关系表明，接触点非常有选择性，并且当FAPbBr（3）薄膜的质量进一步提高时，有望获得更高的V-oc值。总体而言，基于这些薄膜的器件在标准照明条件下具有可忽略的滞后，显示出7％的可观功率转换效率。最后，在无腔结构中探索的FAPbBr（3）钙钛矿薄膜的放大自发发射（ASE）行为在190μJcm（-2）的注量下显示出锐利的ASE阈值，具有较高的量子效率，进一步证实了高品质电影。

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  • 来源
    《Advanced Functional Materials》 |2016年第17期|2846-2854|共9页
  • 作者

    Arora Neha; Dar M. Ibrahim; Hezam Mahmoud; Tress Wolfgang; Jacopin Gwenole; Moehl Thomas; Gao Peng; Aldwayyan Abdulah Saleh; Deveaud Benoit; Gratzel Michael; Nazeeruddin Mohammad Khaja;

  • 作者单位

    Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Grp Mol Engn Funct Mat, CH-1015 Lausanne, Switzerland;

    Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Grp Mol Engn Funct Mat, CH-1015 Lausanne, Switzerland|Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Lab Photon & Interfaces, CH-1015 Lausanne, Switzerland;

    King Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia|Ecole Polytech Fed Lausanne, Inst Phys, Lab Quantum Optoelect, CH-1015 Lausanne, Switzerland;

    Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Lab Photon & Interfaces, CH-1015 Lausanne, Switzerland;

    Ecole Polytech Fed Lausanne, Inst Phys, Lab Quantum Optoelect, CH-1015 Lausanne, Switzerland;

    Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Lab Photon & Interfaces, CH-1015 Lausanne, Switzerland;

    Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Grp Mol Engn Funct Mat, CH-1015 Lausanne, Switzerland;

    King Saud Univ, Coll Sci, Dept Phys & Astron, Photon Lab, Riyadh 11451, Saudi Arabia;

    Ecole Polytech Fed Lausanne, Inst Phys, Lab Quantum Optoelect, CH-1015 Lausanne, Switzerland;

    Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Lab Photon & Interfaces, CH-1015 Lausanne, Switzerland;

    Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Grp Mol Engn Funct Mat, CH-1015 Lausanne, Switzerland;

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