A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

Orru Marta; Repiso Eva; Carapezzi Stefania; Henning Alex; Roddaro Stefano; Franciosi Alfonso; Rosenwaks Yossi; Cavallini Anna; Martelli Faustino; Rubini Silvia

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A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

机译：分子束外延生长的自控GaAs纳米线的受控和高效n型掺杂的路线图

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N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier density as high as 10(20) electron cm(-3) by self-assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of highly doped nanowires are extracted through a combination of transport measurement and Kelvin probe force microscopy analysis in single-wire field-effect devices. Low-temperature photoluminescence is used to characterize the Te-doped nanowires over several orders of magnitude of the impurity concentration. The combined use of those techniques allows the precise definition of the growth conditions required for effective Te incorporation.

机译：事实证明，GaAs纳米线的N型掺杂很困难，因为硅杂质的两性特性会通过纳米线的生长机理和生长条件得到增强。在这里展示了通过使用Te供体的自辅助分子束外延可控地生长载流子密度高达10（20）电子cm（-3）的n型GaAs纳米线。通过在单线场效应器件中结合传输测量和开尔文探针力显微镜分析来提取高掺杂纳米线的载流子密度和电子迁移率。低温光致发光用于在杂质浓度的几个数量级上表征Te掺杂的纳米线。这些技术的组合使用可以精确定义有效掺入Te所需的生长条件。

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《Advanced Functional Materials》 |2016年第17期|2836-2845|共10页
作者
Orru Marta; Repiso Eva; Carapezzi Stefania; Henning Alex; Roddaro Stefano; Franciosi Alfonso; Rosenwaks Yossi; Cavallini Anna; Martelli Faustino; Rubini Silvia;
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IOM CNR Lab TASC, SS 14 Km 163-5, I-34149 Trieste, Italy;

IOM CNR Lab TASC, SS 14 Km 163-5, I-34149 Trieste, Italy|Univ Trieste, Dipartmento Fis, Via Valerio 2, I-34127 Trieste, Italy;

Univ Bologna, Dept Phys & Astron, Viale Berti Pichat 6-2, I-40127 Bologna, Italy;

Tel Aviv Univ, Sch Elect Engn, Dept Phys Elect, IL-69978 Ramat Aviv, Israel;

IOM CNR Lab TASC, SS 14 Km 163-5, I-34149 Trieste, Italy|Scuola Normale Super Pisa, NEST, Piazza S Silvestro 12, I-56127 Pisa, Italy|Ist Nanosci CNR, Piazza S Silvestro 12, I-56127 Pisa, Italy;

IOM CNR Lab TASC, SS 14 Km 163-5, I-34149 Trieste, Italy|Univ Trieste, Dipartmento Fis, Via Valerio 2, I-34127 Trieste, Italy|Elettra Sincrotrone Trieste SCpA, Area Sci Pk,SS 14,Km 163-5, I-34149 Trieste, Italy;

Tel Aviv Univ, Sch Elect Engn, Dept Phys Elect, IL-69978 Ramat Aviv, Israel;

Univ Bologna, Dept Phys & Astron, Viale Berti Pichat 6-2, I-40127 Bologna, Italy;

IMM CNR, Via Fosso Cavaliere 100, I-00133 Rome, Italy;

IOM CNR Lab TASC, SS 14 Km 163-5, I-34149 Trieste, Italy;

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机译：Si掺杂诱导的无催化剂分子束外延气相固液生长Si掺杂GaAs纳米线中的闪锌矿和纤锌矿相分离
2. Demonstration of n-type behavior in catalyst-free Si-doped GaAs na no wires grown by molecular beam epitaxy [J] . Applied Physics Letters . 2020,第5期

机译：在无催化剂掺杂的硅掺杂的砷化镓中无分子束外延生长的n型行为的证明
3. Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy [J] . Zhou Shuxing, Ai Likun, Qi Ming, Journal of Materials Science . 2018,第5期

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4. Vapor-Solid Selective Area Molecular Beam Epitaxy and N-Type Doping of Catalyst-Free GaAs:Si Nanowires on Silicon [C] . Daniel Ruhstorfer, Simon Mejia, Hubert Riedl, Compound Semiconductor Week . 2019

机译：硅上无催化剂的GaAs：Si纳米线的气固选择区分子束外延和N型掺杂。
5. Micro-Photoluminescence (mu-PL) Study of Core-Shell GaAs/GaAsSb Nanowires grown by Self-Assisted Molecular Beam Epitaxy [D] . Sami, Md Shifat Us. 2015

机译：通过自助分子束外延生长核心壳GaAs / Gaassb纳米线的微光致发光（MU-PL）研究
6. Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties [O] . Łukasz Gelczuk, Jan Kopaczek, Thomas B. O. Rockett, -1

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7. Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy [O] . Lu, Zhenyu, Zhang, Zhi, Chen, Pingping, 2014

机译：铋诱导的分子束外延生长的GaAs纳米线的相控

A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

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