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首页> 外文期刊>Advanced Functional Materials >Inhibition of Ion Migration for Reliable Operation of Organolead Halide Perovskite-Based Metal/Semiconductor/Metal Broadband Photodetectors
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Inhibition of Ion Migration for Reliable Operation of Organolead Halide Perovskite-Based Metal/Semiconductor/Metal Broadband Photodetectors

机译：抑制离子迁移以可靠地运行基于有机卤化物钙钛矿的金属/半导体/金属宽带光电探测器

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摘要

Organolead halide perovskites (OHPs) have attracted extensive attention as light harvesting materials for solar cells recently, because of their high charge carrier mobility, high photoconversion efficiencies, low cost, and simple methodology. Despite these advantages, the OHPs exhibit sweep-dependent hysteresis behavior in current-voltage characteristics films, deteriorating the reliability of devices based on the OHPs. This study demonstrates reliable high on/off ratio (I-on/I-off = 10(4)) CH3NH3PbI3 broadband photodetectors with buffer layer-free simple metal/semiconductor/metal lateral structure. At high external bias, poor on/off ratios and spikes in dark current and photocurrent are observed due to the migration of charged defect ions. The ion migration can be effectively inhibited at low external bias, and thus the devices show high I-on/I-off ratios and spike-free dark current and photocurrent. In addition, prevention of the prepoling in the CH3NH3PbI3 films by operating at the low external bias results in pronouncedly enhanced signal-to-noise ratios even under low intensity incident light. These results strongly propose that inhibiting the migration of charged defect ions in CH3NH3PbI3 films is a key in developing reliable high performance CH3NH3PbI3-based devices.
机译：作为有机太阳能电池的光收集材料，有机油卤化物钙钛矿（OHP）近年来因其高的载流子迁移率，高的光转换效率，低成本和简单的方法而引起了广泛的关注。尽管具有这些优点，OHP在电流-电压特性膜中仍显示出与扫描相关的磁滞行为，从而降低了基于OHP的器件的可靠性。这项研究表明可靠的高开/关比（I-on / I-off = 10（4））CH3NH3PbI3宽带光电探测器具有无缓冲层的简单金属/半导体/金属横向结构。在高外部偏置下，由于带电缺陷离子的迁移，观察到较差的开/关比以及暗电流和光电流的尖峰。可以在低外部偏置下有效地抑制离子迁移，因此该器件显示出高的I-on / I-off比以及无尖峰的暗电流和光电流。此外，即使在低强度入射光下，通过在低外部偏置下运行来防止CH3NH3PbI3膜中的预极化也能显着提高信噪比。这些结果强烈表明，抑制CH3NH3PbI3膜中带电缺陷离子的迁移是开发可靠的高性能CH3NH3PbI3基器件的关键。

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  • 来源
    《Advanced Functional Materials》 |2016年第23期|4213-4222|共10页
  • 作者

    Kwon Ki Chang; Hong Kootak; Van Le Quyet; Lee Sun Yong; Choi Jaeho; Kim Ki-Bum; Kim Soo Young; Jang Ho Won;

  • 作者单位

    Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 08826, South Korea;

    Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 08826, South Korea;

    Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 06974, South Korea;

    Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 08826, South Korea;

    Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 08826, South Korea;

    Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 08826, South Korea;

    Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 06974, South Korea;

    Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 08826, South Korea;

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