• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer
【24h】

Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer

机译：超薄VOx中间层的低温原子层沉积可实现有机场效应晶体管中的高效电荷注入

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Charge injection at metal/organic interface is a critical issue for organic electronic devices in general as poor charge injection would cause high contact resistance and severely limit the performance of organic devices. In this work, a new approach is presented to enhance the charge injection by using atomic layer deposition (ALD) to prepare an ultrathin vanadium oxide (VOx) layer as an efficient hole injection interlayer for organic field-effect transistors (OFETs). Since organic materials are generally delicate, a gentle low-temperature ALD process is necessary for compatibility. Therefore, a new low-temperature ALD process is developed for VOx at 50 degrees C using a highly volatile vanadium precursor of tetrakis(dimethylamino)vanadium and non-oxidizing water as the oxygen source. The process is able to prepare highly smooth, uniform, and conformal VOx thin films with precise control of film thickness. With this ALD process, it is further demonstrated that the ALD VOx interlayer is able to remarkably reduce the interface contact resistance, and, therefore, significantly enhance the device performance of OFETs. Multiple combinations of the metal/VOx/organic interface (i.e., Cu/VOx/pentacene, Au/VOx/pentacene, and Au/VOx/BOPAnt) are examined, and the results uniformly show the effectiveness of reducing the contact resistance in all cases, which, therefore, highlights the broad promise of this ALD approach for organic devices applications in general.
机译：通常，金属/有机界面处的电荷注入是有机电子设备的关键问题，因为不良的电荷注入会导致高接触电阻并严重限制有机设备的性能。在这项工作中，提出了一种新方法来增强电荷注入，方法是使用原子层沉积（ALD）制备超薄钒氧化物（VOx）层作为有机场效应晶体管（OFET）的有效空穴注入中间层。由于有机材料通常很脆弱，因此需要柔和的低温ALD工艺以实现兼容性。因此，使用四（二甲基氨基）钒的高挥发性钒前体和非氧化水作为氧源，开发了一种新的低温ALD工艺，用于50摄氏度下的VOx。该方法能够制备高度光滑，均匀且保形的VOx薄膜，并且可以精确控制薄膜厚度。通过这种ALD工艺，进一步证明了ALD VOx中间层能够显着降低界面接触电阻，从而显着提高了OFET的器件性能。检查了金属/ VOx /有机界面的多种组合（即Cu / VOx /并五苯，Au / VOx /并五苯和Au / VOx / BOPAnt），结果一致显示了在所有情况下降低接触电阻的有效性因此，这突显了这种ALD方法在有机设备中的广泛应用前景。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号