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首页> 外文期刊>Advanced Functional Materials >Engineering Substrate Interactions for High Luminescence Efficiency of Transition-Metal Dichalcogenide Monolayers
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Engineering Substrate Interactions for High Luminescence Efficiency of Transition-Metal Dichalcogenide Monolayers

机译：过渡金属双硫属化物单层的高发光效率的工程基质相​​互作用。

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摘要

It is demonstrated that the luminescence efficiency of monolayers composed of MoS2, WS2, and WSe2 is significantly limited by the substrate and can be improved by orders of magnitude through substrate engineering. The substrate affects the efficiency mainly through doping the monolayers and facilitating defect-assisted nonradiative exciton recombinations, while the other substrate effects including straining and dielectric screening play minor roles. The doping may come from the substrate and substrate-borne water moisture, the latter of which is much stronger than the former for MoS2 and WS2 but negligible for WSe2. Using proper substrates such as mica or hexagonal boron nitride can substantially mitigate the doping effect. The defect-assisted recombination depends on the interaction between the defect in the monolayer and the substrate. Suspended monolayers, in which the substrate effects are eliminated, may have efficiency up to 40% at room temperatures. The result provides useful guidance for the rational design of atomic-scale light emission devices.
机译：事实证明，由MoS2，WS2和WSe2组成的单层的发光效率受到基板的显着限制，并且可以通过基板工程提高几个数量级。衬底主要通过掺杂单层和促进缺陷辅助的非辐射激子复合来影响效率，而其他衬底效应（包括应变和介电屏蔽）则起着很小的作用。掺杂可能来自基材和基材所携带的水分，后者对MoS2和WS2的作用比前者强得多，但对WSe2则可以忽略不计。使用合适的衬底，例如云母或六方氮化硼可以大大减轻掺杂效果。缺陷辅助的重组取决于单层缺陷与基底之间的相互作用。消除了基材效应的悬浮单层在室温下的效率最高可达40％。该结果为合理设计原子级发光器件提供了有益的指导。

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  • 来源
    《Advanced Functional Materials》 |2016年第26期|4733-4739|共7页
  • 作者

    Yu Yifei; Yu Yiling; Xu Chao; Cai Yong-Qing; Su Liqin; Zhang Yong; Zhang Yong-Wei; Gundogdu Kenan; Cao Linyou;

  • 作者单位

    North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA|North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA;

    North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA;

    ASTAR, Inst High Performance Comp, Singapore 138632, Singapore;

    Univ North Carolina Charlotte, Dept Elect & Comp Engn, Charlotte, NC 28223 USA;

    Univ North Carolina Charlotte, Dept Elect & Comp Engn, Charlotte, NC 28223 USA;

    ASTAR, Inst High Performance Comp, Singapore 138632, Singapore;

    North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA;

    North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA|North Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA;

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