• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Toward Flexible Spintronics: Perpendicularly Magnetized Synthetic Antiferromagnetic Thin Films and Nanowires on Polyimide Substrates
【24h】

Toward Flexible Spintronics: Perpendicularly Magnetized Synthetic Antiferromagnetic Thin Films and Nanowires on Polyimide Substrates

机译：迈向柔性自旋电子学：聚酰亚胺基片上垂直磁化的合成反铁磁薄膜和纳米线

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The successful fabrication of ultra-thin films of CoFeB/Pt with strong perpendicular magnetic anisotropy and antiferromagnetic interfacial interlayer coupling on flexible polyimide substrates is demonstrated. Despite an increased surface roughness and defect density on the polyimide substrate, magnetic single layers of CoFeB still show sharp coercive switching. Magnetic Kerr imaging shows that the magnetization reversal is dominated by a greater density of nucleation sites than the identical film grown on Si. These layers maintain their magnetic characteristics down to a radius of curvature of 350 +/- mu m. Further, antiferromagnetically (AF) Ruderman-Kittel-Kasuya-Yoshida (RKKY) coupled bilayers of CoFeB were fabricated which are robust under bending and the coupling strength is successfully modulated via interlayer engineering. Finally, a perpendicular synthetic antiferromagnetic (SAF) thin film grown on a polyimide substrate is patterned into straight 10 mu m long nanowires down to 210 nm in width that displayed the robust switching characteristics of the thin film. These are extremely promising results for the fabrication of robust, flexible, magneto-electronic, non-volatile memory, logic, and sensor devices.
机译：证明了在柔性聚酰亚胺衬底上成功制备出具有强垂直磁各向异性和反铁磁界面层间耦合的CoFeB / Pt超薄膜。尽管聚酰亚胺衬底上的表面粗糙度和缺陷密度增加，但CoFeB的磁性单层仍显示出剧烈的矫顽转换。磁性克尔成像显示，与在Si上生长的相同薄膜相比，磁化反转的主要成核点密度更高。这些层保持其磁特性低至曲率半径为350 +/-μm。此外，制造了反铁磁（AF）的CoFeB的Ruderman-Kittel-Kasuya-Yoshida（RKKY）耦合双层，该双层在弯曲下很坚固，并且通过层间工程成功地调节了耦合强度。最后，将在聚酰亚胺衬底上生长的垂直合成反铁磁（SAF）薄膜构图成10微米长的直纳米线，其宽度向下至210 nm，显示出该薄膜强大的开关特性。对于制造坚固，灵活，磁电，非易失性存储器，逻辑和传感器设备而言，这些结果极有希望。

著录项

  • 来源
    《Advanced Functional Materials》 |2016年第26期|4704-4711|共8页
  • 作者

    Vemulkar T.; Mansell R.; Fernandez-Pacheco A.; Cowburn R. P.;

  • 作者单位

    Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;

    Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;

    Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;

    Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号