High-Speed and Low-Energy Nitride Memristors

Choi Byung Joon; Torrezan Antonio C.; Strachan John Paul; Kotula P. G.; Lohn A. J.; Marinella Matthew J.; Li Zhiyong; Williams R. Stanley; Yang J. Joshua

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High-Speed and Low-Energy Nitride Memristors

机译：高速低能氮化物忆阻器

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High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (approximate to 85 ps for microdevices with waveguide) and relatively low switching current (approximate to 15 mu A for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

机译：已经证明了基于AlN膜的高性能忆阻器，其具有超快的ON / OFF切换时间（对于具有波导的微器件，约为85 ps）和较低的开关电流（对于50 nm器件，约为15μA）。进行物理表征以了解设备切换机制，并使速度和能量性能合理化。揭示了通过AlN层形成的富Al导电通道。带正电的氮空位的运动可能是观察到的转换的原因。

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来源
《Advanced Functional Materials》 |2016年第29期|5290-5296|共7页
作者
Choi Byung Joon; Torrezan Antonio C.; Strachan John Paul; Kotula P. G.; Lohn A. J.; Marinella Matthew J.; Li Zhiyong; Williams R. Stanley; Yang J. Joshua;
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Hewlett Packard Labs, Palo Alto, CA 94304 USA|Seoul Natl Univ Sci & Technol, Dept Mat Sci & Engn, Seoul 01811, South Korea;

Hewlett Packard Labs, Palo Alto, CA 94304 USA;

Hewlett Packard Labs, Palo Alto, CA 94304 USA;

Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA;

Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA;

Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA;

Hewlett Packard Labs, Palo Alto, CA 94304 USA;

Hewlett Packard Labs, Palo Alto, CA 94304 USA;

Hewlett Packard Labs, Palo Alto, CA 94304 USA|Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA;

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High-Speed and Low-Energy Nitride Memristors

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