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Non-Volatile Polymer Electroluminescence Programmable with Ferroelectric Field-Induced Charge Injection Gated

机译:非易失性聚合物电致发光,可通过铁电场诱导的电荷注入门控进行编程

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摘要

Electroluminescence (EL) of organic and polymeric fluorescent materials programmable in the luminance is extremely useful as a non-volatile EL memory with the great potential in the variety of emerging information storage applications for imaging and motion sensors. In this work, a novel non-volatile EL memory in which arbitrarily chosen EL states are programmed and erased repetitively with long EL retention is demonstrated. The memory is based on utilizing the built-in electric field arising from the remnant polarization of a ferroelectric polymer which in turn controls the carrier injection of an EL device. A device with vertically stacked components of a transparent bottom electrode/a ferroelectric polymer/a hole injection layer/a light emitting layer/a top electrode successfully emits light upon alternating current (AC) operation. Interestingly, the device exhibits two distinctive non-volatile EL intensities at constant reading AC voltage, depending upon the programmed direct current (DC) voltage on the ferroelectric layer. DC programmed and AC read EL memories are also realized with different EL colors of red, green and blue. Furthermore, more than four distinguishable EL states are precisely addressed upon the programmed voltage input each of which shows excellent EL retention and multiple cycle endurance of more than 10(5) s and 10(2) cycles, respectively.
机译:可编程的有机和聚合荧光材料的电致发光(EL)作为非易失性EL存储器非常有用,在新兴的成像和运动传感器信息存储应用中具有巨大的潜力。在这项工作中,展示了一种新颖的非易失性EL存储器,其中任意选择的EL状态被编程并具有长的EL保留地重复擦除。该存储器基于利用由铁电聚合物的残余极化产生的内置电场,该电场又控制EL器件的载流子注入。具有透明底部电极/铁电聚合物/空穴注入层/发光层/顶部电极的垂直堆叠组件的器件在交流电(AC)操作下成功发光。有趣的是,根据铁电层上编程的直流(DC)电压,该设备在恒定的读取AC电压下表现出两种独特的非易失性EL强度。直流编程和交流读取的EL存储器还可以使用红色,绿色和蓝色的不同EL颜色实现。此外,在编程的电压输入上可以精确地处理四个以上可区分的EL状态,每个状态都显示出出色的EL保持力,并具有超过10(5)s和10(2)个周期的多次循环耐久性。

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  • 来源
    《Advanced Functional Materials》 |2016年第30期|5391-5399|共9页
  • 作者单位

    Yonsei Univ, Dept Mat Sci & Engn, Yonsei Ro 50, Seoul 03722, South Korea;

    Yonsei Univ, Dept Mat Sci & Engn, Yonsei Ro 50, Seoul 03722, South Korea;

    Yonsei Univ, Dept Mat Sci & Engn, Yonsei Ro 50, Seoul 03722, South Korea;

    Yonsei Univ, Dept Mat Sci & Engn, Yonsei Ro 50, Seoul 03722, South Korea;

    Yonsei Univ, Dept Mat Sci & Engn, Yonsei Ro 50, Seoul 03722, South Korea;

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