Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers

Lee Young Tack; Lee Junyeong; Ju Hyunsu; Lim Jung Ah; Yi Yeonjin; Choi Won Kook; Hwang Do Kyung; Im Seongil

首页> 外文期刊>Advanced Functional Materials >Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers

【24h】

Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers

机译：基于黑色磷2D纳米片的非易失性电荷注入存储器，用于电荷陷阱和有源沟道层

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

2D van der Waals atomic crystal materials have great potential for use in future nanoscale electronic and optoelectronic applications owing to their unique properties such as a tunable energy band gap according to their thickness or number of layers. Recently, black phosphorous (BP) has attracted significant interest because it is a single-component material like graphene and has high mobility, a direct band gap, and exhibits ambipolar transition behavior. This study reports on a charge injection memory field-effect transistor on a glass substrate, where few-layer BPs act as the active channel and charge trapping layers, and Al2O3 films grown by atomic layer deposition act as the tunneling and blocking layers. Because of the ambipolar properties of BP nanosheets, both electrons and holes are involved in the charge trapping process, resulting in bilateral threshold voltage shifts with a large memory window of 22 V. Finally, a memory circuit of a resistive-load inverter is implemented that converts analog signals (current) to digital signals (voltage). Such a memory inverter also shows a clear memory window and distinct memory on/off switching characteristics.

机译：2D van der Waals原子晶体材料具有独特的特性，例如根据厚度或层数可调的能带隙，因此在未来的纳米级电子和光电应用中具有巨大的潜力。近年来，黑磷（BP）引起了人们极大的兴趣，因为它是像石墨烯这样的单组分材料，具有高迁移率，直接带隙并且表现出双极性跃迁行为。这项研究报告了玻璃基板上的电荷注入存储场效应晶体管，其中很少层的BP充当有源沟道和电荷俘获层，而通过原子层沉积生长的Al2O3膜充当隧穿和阻挡层。由于BP纳米片的双极性特性，电子和空穴都参与了电荷俘获过程，导致双向阈值电压漂移，具有22 V的大存储窗口。最后，实现了电阻负载逆变器的存储电路将模拟信号（电流）转换为数字信号（电压）。这样的存储器反相器还显示出清晰的存储器窗口和独特的存储器开/关切换特性。

著录项

来源
《Advanced Functional Materials》 |2016年第31期|5701-5707|共7页
作者
Lee Young Tack; Lee Junyeong; Ju Hyunsu; Lim Jung Ah; Yi Yeonjin; Choi Won Kook; Hwang Do Kyung; Im Seongil;
展开▼
作者单位

KIST, Ctr Optoelect Mat & Devices, Postsilicon Semicond Inst, Seoul 02792, South Korea;

Yonsei Univ, Inst Phys & Appl Phys, Seoul 03722, South Korea;

KIST, Ctr Optoelect Mat & Devices, Postsilicon Semicond Inst, Seoul 02792, South Korea;

KIST, Ctr Optoelect Mat & Devices, Postsilicon Semicond Inst, Seoul 02792, South Korea;

Yonsei Univ, Inst Phys & Appl Phys, Seoul 03722, South Korea;

KIST, Mat & Life Sci Res Div, Seoul 02792, South Korea|KUST, Dept Nanomat & Nano Sci, Daejeon 34113, South Korea;

KIST, Ctr Optoelect Mat & Devices, Postsilicon Semicond Inst, Seoul 02792, South Korea|KUST, Dept Nanomat & Nano Sci, Daejeon 34113, South Korea;

Yonsei Univ, Inst Phys & Appl Phys, Seoul 03722, South Korea;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
2D nanosheet transistor; black phosphorous (BP); charge injection; trapping; nonvolatile memory;

机译：二维纳米片晶体管;黑磷（BP）;电荷注入;俘获;非易失性存储器;

相似文献

外文文献
中文文献
专利

1. Process Optimization and Device Characterization of Nonvolatile Charge Trap Memory Transistors Using In–Ga–ZnO Thin Films as Both Charge Trap and Active Channel Layers [J] . Da-Jeong Yun, Han-Byeol Kang, Sung-Min Yoon IEEE Transactions on Electron Devices . 2016,第8期

机译：使用In-Ga-ZnO薄膜作为电荷陷阱层和有源沟道层的非易失性电荷陷阱存储器晶体管的工艺优化和器件表征
2. Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer [J] . IEEE Electron Device Letters . 2014,第3期

机译：具有顶部门结构的In-Ga-Zn-O有源沟道和ZnO电荷陷阱层的非易失性电荷陷阱存储器晶体管
3. Tunable Memory Characteristics Of Nanostructured, Nonvolatile Charge Trap Memory Devices Based On A Binary Mixture Of Metal Nanoparticles As A Charge Trapping Layer [J] . Jang-Sik Lee, Yong-Mu Kim, Jeong-Hwa Kwon, Advanced Materials . 2009,第2期

机译：基于金属纳米粒子的二元混合物作为电荷陷阱层的纳米结构非易失性电荷陷阱存储器件的可调存储特性
4. Additional charge trapping layer SONOS nonvolatile memory based on ultra-thin body poly-Si junctionless FinFET [C] . Wang Wei-Cheng, Chung Chien-Chih, Chung Ming-Hsien, IEEE Silicon Nanoelectronics Workshop . 2015

机译：基于超薄多晶硅无结FinFET的附加电荷捕获层SONOS非易失性存储器
5. Design, characterization and modeling of charge trapping nonvolatile semiconductor memory devices. [D] . Eichenlaub, Nathan. 2009

机译：电荷捕获非易失性半导体存储器件的设计，表征和建模。
6. Semiconductors: High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers (Adv. Sci. 8/2017) [O] . Wen Li, Fengning Guo, Haifeng Ling, 2017

机译：半导体：基于并五苯/ P13 /并五苯作为电荷传输层和陷阱层的有机半导体异质结构的高性能非易失性有机场效应晶体管存储器（Adv。Sci。8/2017）
7. High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers [O] . Wen Li, Fengning Guo, Haifeng Ling, 2017

机译：基于有机半导体异质结构的高性能非易失性有机场效应晶体管存储器作为电荷输送和捕获层的五苯甲酸/ P13 /五苯二烯异质结构

Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers

摘要

著录项

相似文献

相关主题

期刊订阅