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首页> 外文期刊>Advanced Functional Materials >Broadband Photoresponse Enhancement of a High-Performance t-Se Microtube Photodetector by Plasmonic Metallic Nanoparticles
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Broadband Photoresponse Enhancement of a High-Performance t-Se Microtube Photodetector by Plasmonic Metallic Nanoparticles

机译：等离子体金属纳米粒子增强高性能t-Se微管光电探测器的宽带光响应

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摘要

Broadband responsivity enhancement of single Se microtube (Se-MT) photodetectors in the UV-visible region is presented in this research. The pristine Se-MT photodetector demonstrates broadband photoresponse from 300 to 700 nm with peak responsivity of approximate to 19 mA W-1 at 610 nm and fast speed (rise time 0.32 ms and fall time 23.02 ms). To further enhance the responsivity of the single Se-MT photodetector, Au and Pt nanoparticles (NPs) are sputtered on these devices. In contrast to only enhancement of responsivity in UV region by Pt NPs, broadband responsivity enhancement (approximate to 600% to approximate to 800%) of the Se-MT photodetector is realized from 300 to 700 nm by tuning the size and density of Au NPs. The broadband responsivity enhancement phenomena are interpreted by both the surface modification and surface plasmon coupling. The experimental results of this work provide an additional opportunity for fabricating high-performance UV-visible broadband photodetectors.
机译：在这项研究中提出了单硒微管（Se-MT）光电探测器在紫外可见区域的宽带响应增强。原始的Se-MT光电探测器显示了300至700 nm的宽带光响应，在610 nm处具有较快的响应速度（上升时间0.32 ms，下降时间23.02 ms），峰值响应约为19 mA W-1。为了进一步增强单个Se-MT光电探测器的响应能力，在这些设备上溅射了Au和Pt纳米颗粒（NPs）。与仅通过Pt NP增强UV区域的响应度相反，通过调节Au NP的尺寸和密度，可以在300至700 nm范围内实现Se-MT光电探测器的宽带响应度增强（大约600％至大约800％）。 。宽带响应性增强现象可以通过表面修饰和表面等离子体激元耦合来解释。这项工作的实验结果为制造高性能紫外可见宽带光电探测器提供了额外的机会。

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  • 来源
    《Advanced Functional Materials》 |2016年第36期|6641-6648|共8页
  • 作者

    Hu Kai; Chen Hongyu; Jiang Mingming; Teng Feng; Zheng Lingxia; Fang Xiaosheng;

  • 作者单位

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

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