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首页> 外文期刊>Advanced Functional Materials >Synthesis of Ultrathin, Homogeneous Copolymer Dielectrics to Control the Threshold Voltage of Organic Thin-Film Transistors
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Synthesis of Ultrathin, Homogeneous Copolymer Dielectrics to Control the Threshold Voltage of Organic Thin-Film Transistors

机译：超薄均相共聚物电介质的合成以控制有机薄膜晶体管的阈值电压

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摘要

This work demonstrates that threshold voltage (V-T) of organic thin-film transistors (OTFTs) can be controlled systematically by introducing new copoly mer dielectrics with electropositive functionality. A series of homogeneous copolymer dielectrics are polymerized from two monomers, 1,3,5-trimethyl- 1,3,5-trivinyl cyclotrisiloxane (V3D3) and 1-vinylimidazole (VI), via initiated chemical vapor deposition. The chemical composition of the copolymer dielectrics is exquisitely controlled to tune the V-T of C-60 OTFTs. In particular, all the copolymer dielectrics demonstrated in this work exhibit extremely low leakage current densities (lower than 2.5 x 10(-8) A cm(-2) at +/- 3 MV cm(-1)) even with a thickness less than 23 nm. Furthermore, by introducing an ultrathin pV3D3 interfacial layer (about 3 nm) between the copolymer dielectrics and C-60 semiconductor, the high mobility of the C-60 OTFTs (about 1 cm 2 V-1 s(-1)) remains unperturbed, showing that V-T can be controlled independently by tuning the composition of the copolymer dielectrics. Coupled with the ultralow dielectric thickness, the independent V-T controllability allows the V-T to be aligned near 0 V with sub-3 V operating voltage, which enables a substantial decrease of device power consumption. The suggested method can be employed widely to enhance device performance and reduce power consumption in various organic integrated circuit applications.
机译：这项工作表明，可以通过引入具有正电功能的新型共聚物电介质来系统地控制有机薄膜晶体管（OTFT）的阈值电压（V-T）。通过引发的化学气相沉积，由两种单体1,3,5-三甲基-1,3,5-三乙烯基环三硅氧烷（V3D3）和1-乙烯基咪唑（VI）聚合一系列均相共聚物电介质。可以精确控制共聚物电介质的化学成分，以调节C-60 OTFT的V-T。特别是，在这项工作中展示的所有共聚物电介质即使在厚度较小的情况下，也表现出极低的漏电流密度（在+/- 3 MV cm（-1）时低于2.5 x 10（-8）A cm（-2）。比23 nm此外，通过在共聚物电介质和C-60半导体之间引入超薄pV3D3界面层（约3 nm），C-60 OTFT的高迁移率（约1 cm 2 V-1 s（-1））不会受到干扰，表明通过调节共聚物电介质的成分可以独立控制VT。加上极低的介电层厚度，独立的V-T可控性允许V-T在低于3 V的工作电压下对准0 V，从而大大降低了器件功耗。在各种有机集成电路应用中，所建议的方法可被广泛采用以增强器件性能并降低功耗。

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  • 来源
    《Advanced Functional Materials》 |2016年第36期|6574-6582|共9页
  • 作者

    Pak Kwanyong; Seong Hyejeong; Choi Junhwan; Hwang Wan Sik; Im Sung Gap;

  • 作者单位

    Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn & KI Nano Century, 291 Daehak Ro, Daejeon 305701, South Korea;

    Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn & KI Nano Century, 291 Daehak Ro, Daejeon 305701, South Korea;

    Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn & KI Nano Century, 291 Daehak Ro, Daejeon 305701, South Korea;

    Korea Aerosp Univ, Dept Mat Engn, Gyeonggi Do 412791, South Korea;

    Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn & KI Nano Century, 291 Daehak Ro, Daejeon 305701, South Korea;

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