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Magnetic Field Effect in Organic Light-Emitting Diodes Based on Electron Donor-Acceptor Exciplex Chromophores Doped with Fluorescent Emitters

机译:掺杂有荧光发射体的电子给体-受体复合发色团在有机发光二极管中的磁场效应

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摘要

A new type of organic light-emitting diode (OLED) has emerged that shows enhanced operational stability and large internal quantum efficiency approaching 100%, which is based on thermally activated delayed fluorescence (TADF) compounds doped with fluorescent emitters. Magne-to-electroluminescence (MEL) in such TADF-based OLEDs and magnetophoto-luminescence (MPL) in thin films based on donor-acceptor (D-A) exciplexes doped with fluorescent emitters with various concentrations are investigated. It has been found that both MEL and MPL responses are thermally activated with substantially lower activation energy compared to that in the pristine undoped D-A exciplex host blend. In addition, both MPL and MEL steeply decrease with the emitter's concentration. This indicates the existence of a loss mechanism, whereby the triplet charge-transfer state in the exciplex host blend may directly decay to the lowest, nonemissive triplet state of the fluorescent emitter molecules.
机译:一种新型有机发光二极管(OLED)出现了,其显示了增强的操作稳定性和接近100%的大内部量子效率,这是基于掺有荧光发射体的热激活延迟荧光(TADF)化合物的。研究了这种基于TADF的OLED中的磁致电致发光(MEL)和基于掺杂有各种浓度荧光发射体的施主-受主(D-A)激基复合物的薄膜中的磁光致发光(MPL)。已经发现,与原始的未掺杂的D-A激基复合物主体共混物相比,MEL和MPL响应均以显着更低的活化能被热活化。另外,MPL和MEL都随着发射器的浓度而急剧下降。这表明存在损耗机制,由此激基复合物主体掺合物中的三重态电荷转移状态可能直接衰减到荧光发射体分子的最低,无辐射三重态。

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  • 来源
    《Advanced Functional Materials》 |2016年第38期|6930-6937|共8页
  • 作者单位

    Univ Utah, Dept Phys & Astron, Salt Lake City, UT 84112 USA;

    Univ Utah, Dept Phys & Astron, Salt Lake City, UT 84112 USA|Shandong Univ, Sch Phys, Jinan 250100, Peoples R China;

    Univ Utah, Dept Phys & Astron, Salt Lake City, UT 84112 USA;

    Univ Utah, Dept Phys & Astron, Salt Lake City, UT 84112 USA;

    Samsung Elect Co Ltd, Samsung Adv Inst Technol, 130 Samsung Ro, Suwon 16678, Gyeonggi Do, South Korea;

    Samsung Elect Co Ltd, Samsung Adv Inst Technol, 130 Samsung Ro, Suwon 16678, Gyeonggi Do, South Korea;

    Samsung Elect Co Ltd, Samsung Adv Inst Technol, 130 Samsung Ro, Suwon 16678, Gyeonggi Do, South Korea;

    Samsung Elect Co Ltd, Samsung Adv Inst Technol, 130 Samsung Ro, Suwon 16678, Gyeonggi Do, South Korea;

    Univ Utah, Dept Phys & Astron, Salt Lake City, UT 84112 USA;

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